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30N06L-TN3-T Datasheet(PDF) 3 Page - Unisonic Technologies |
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30N06L-TN3-T Datasheet(HTML) 3 Page - Unisonic Technologies |
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3 / 8 page  30N06 Power MOSFET UNISONICTECHNOLOGIESCO.,LTD 3 of 8 www.unisonic.com.tw QW-R502-087.H ELECTRICAL CHARACTERISTICS (TC = 25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS VGS = 0 V, ID = 250 μA 60 V Drain-Source Leakage Current IDSS VDS = 60 V, VGS = 0 V 10 μA Gate-Source Leakage Current Forward IGSS VGS = 20V, VDS = 0 V 100 nA Reverse VGS = -20V, VDS = 0 V -100 nA Breakdown Voltage Temperature Coefficient △BVDSS/△TJ ID =250μA, Referenced to 25°C 0.06 V/°C ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS = VGS, ID = 250 μA 2.0 4.0 V Static Drain-Source On-State Resistance RDS(ON) VGS = 10 V, ID = 15 A 32 40 mΩ DYNAMIC CHARACTERISTICS Input Capacitance CISS VGS = 0 V, VDS = 25 V, f = 1MHz 800 pF Output Capacitance COSS 300 pF Reverse Transfer Capacitance CRSS 50 pF SWITCHING CHARACTERISTICS Turn-On Delay Time tD(ON) VDD = 30V, ID =15 A, VGS=10V (Note 1, 2) 52 ns Turn-On Rise Time tR 96 ns Turn-Off Delay Time tD(OFF) 124 ns Turn-Off Fall Time tF 84 ns Total Gate Charge QG VDS = 60V, VGS = 10 V, ID = 24A (Note 1, 2) 20 30 nC Gate-Source Charge QGS 6 nC Gate-Drain Charge QGD 9 nC SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Drain-Source Diode Forward Voltage VSD VGS = 0 V, IS = 30A 1.4 V Maximum Continuous Drain-Source Diode Forward Current IS 30 A Maximum Pulsed Drain-Source Diode Forward Current ISM 120 A Notes: 1. Pulse Test : Pulse width ≤300μs, Duty cycle ≤ 2% 2. Essentially independent of operating temperature. |
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