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W966K6HB Datasheet(PDF) 4 Page - Winbond |
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W966K6HB Datasheet(HTML) 4 Page - Winbond |
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4 / 74 page  W966K6HB Publication Release Date: Nov. 07, 2014 Revision: A01-002 - 4 - 1. GENERAL DESCRIPTION Winbond CellularRAM™ products are high-speed, CMOS pseudo-static random access memories developed for low-power, portable applications. The device has a DRAM core organized. These devices include an industry- standard burst mode Flash interface that dramatically increases read/write bandwidth compared with other low- power SRAM or Pseudo SRAM offerings. To operate seamlessly on a burst Flash bus, CellularRAM products incorporate a transparent self refresh mechanism. The hidden refresh requires no additional support from the system memory controller and has no significant impact on device READ/WRITE performance. Two user-accessible control registers define device operation. The Bus Configuration Register (BCR) defines how the CellularRAM device interacts with the system memory bus and is nearly identical to its counterpart on burst mode Flash devices. The Refresh Configuration Register (RCR) is used to control how refresh is performed on the DRAM array. These registers are automatically loaded with default settings during power-up and can be updated anytime during normal operation. Special attention has been focused on standby current consumption during self refresh. CellularRAM products include three mechanisms to minimize standby current. Partial array refresh (PAR) enables the system to limit refresh to only that part of the DRAM array that contains essential data. Temperature compensated refresh (TCR) uses an on-chip sensor to adjust the refresh rate to match the device temperature —the refresh rate decreases at lower temperatures to minimize current consumption during standby. Deep power-down (DPD) enables the system to halt the refresh operation altogether when no vital information is stored in the device. The system configurable refresh mechanisms are accessed through the RCR. This CellularRAM device is compliant with the industry-standard CellularRAM 1.5 generation feature set established by the CellularRAM Workgroup. It includes support for both variable and fixed latency, with 3 output-device drive- strength settings, additional wrap options, and a device ID register (DIDR). 2. FEATURES • Supports asynchronous, page, and burst operations • VCC, VCCQ Voltages: 1.7V –1.95V VCC 1.7V –1.95V VCCQ • Random access time: 70ns • Burst mode READ and WRITE access: 4, 8, 16, or 32 words, or continuous burst Burst wrap or sequential Max clock rate: 133 MHz (tCLK = 7.5ns) • Page mode READ access: Sixteen-word page size Interpage READ access: 70ns Intrapage READ access: 20ns • Low-power features On-chip temperature compensated refresh (TCR) Partial array refresh (PAR) Deep power-down (DPD) mode • Package: 54 Ball VFBGA (6mm x8mm) • Active current (ICC1) < 25mA at 85°C • Standby current : 200µA (max) at 85°C • Deep power-down: Typical 10µA •Operating temperature range: -40 °C ≤ TCASE ≤ 85°C 3. ORDERING INFORMATION Part Number VDD/VDDQ I/O Width Type Others W966K6HBGX7I 1.8/1.8 x16 54VFBGA CRAM Non-Mux,133MHz, -40°C~85°C |
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