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1N65AL-T92-B Datasheet(PDF) 4 Page - Unisonic Technologies |
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1N65AL-T92-B Datasheet(HTML) 4 Page - Unisonic Technologies |
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4 / 9 page  1N65A Power MOSFET UNISONICTECHNOLOGIESCO.,LTD 4 of 9 www.unisonic.com.tw QW-R502-584.C ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified.) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS VGS = 0V, ID = 250μA 650 V Drain-Source Leakage Current IDSS VDS = 650V, VGS = 0V 10 μA Gate-Source Leakage Current Forward IGSS VGS = 20V, VDS = 0V 100 nA Reverse VGS = -20V, VDS = 0V -100 nA Breakdown Voltage Temperature Coefficient △BVDSS △ /TJ ID =250mA,referenced to 25°C 0.4 V/°C ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS = VGS, ID = 250μA 2.0 4.5 V Static Drain-Source On-State Resistance RDS(ON) VGS = 10V, ID = 0.5A 11.5 15.5 Ω DYNAMIC CHARACTERISTICS Input Capacitance CISS VDS=25V, VGS=0V, f=1MHz 100 pF Output Capacitance COSS 20 pF Reverse Transfer Capacitance CRSS 3 pF SWITCHING CHARACTERISTICS Turn-On Delay Time tD (ON) VDD=325V, ID=0.5A, RG=5Ω (Note 1,2) 12 34 ns Turn-On Rise Time tR 11 32 ns Turn-Off Delay Time tD (OFF) 40 90 ns Turn-Off Fall Time tF 18 46 ns Total Gate Charge QG VDS=520V, VGS=10V, ID=0.8A (Note 1,2) 8 10 nC Gate-Source Charge QGS 1.8 nC Gate-Drain Charge QGD 4.0 nC SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Drain-Source Diode Forward Voltage VSD VGS=0V, ISD = 1.2A 1.6 V Maximum Continuous Drain-Source Diode Forward Current IS 1.2 A Maximum Pulsed Drain-Source Diode Forward Current ISM 4.8 A Reverse Recovery Time trr VGS=0V, ISD = 1.2A di/dt = 100A/μs 136 ns Reverse Recovery Charge QRR 0.3 μC Note: 1. Pulse Test: Pulse Width≤300μs, Duty Cycle≤2% 2. Essentially independent of operating temperature |
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