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4N90G-TF3-T Datasheet(PDF) 4 Page - Unisonic Technologies |
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4N90G-TF3-T Datasheet(HTML) 4 Page - Unisonic Technologies |
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4 / 7 page  4N90 Power MOSFET UNISONICTECHNOLOGIESCO.,LTD 4 of 6 www.unisonic.com.tw QW-R502-479.F ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS VGS=0V, ID=250µA 900 V Breakdown Voltage Temperature Coefficient ∆BVDSS/∆TJ ID=250μA, Referenced to 25°C 1.05 V/°C Drain-Source Leakage Current IDSS VDS=900V, VGS=0V 10 µA VDS=720V, TC=125°C 100 µA Gate- Source Leakage Current Forward IGSS VGS=+30V, VDS=0V +100 nA Reverse IGSS VGS=-30V, VDS=0V -100 nA ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS=VGS, ID=250µA 3.0 5.0 V Drain-Source On-State Resistance RDS(ON) VGS=10V, ID=2A 2.1 4.2 Ω DYNAMIC PARAMETERS Input Capacitance CISS VDS=25V,VGS=0V,f=1.0MHz 1000 1400 pF Output Capacitance COSS 49 85 pF Reverse Transfer Capacitance CRSS 13 18 pF SWITCHING PARAMETERS Total Gate Charge QG VDS=50V, VGS=10V, ID=1.3A (Note 1,2) 33 50 nC Gate-Source Charge QGS 8.9 nC Gate-Drain Charge QGD 10 nC Turn-ON Delay Time tD(ON) VDD=30V, ID=0.5A, RG=25Ω (Note 1,2) 70 100 ns Turn-ON Rise Time tR 188 220 ns Turn-OFF Delay Time tD(OFF) 188 220 ns Turn-OFF Fall Time tF 88 120 ns SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Maximum Body-Diode Continuous Current IS 4 A Maximum Body-Diode Pulsed Current ISM 16 A Drain-Source Diode Forward Voltage VSD IS =4A, VGS=0V 1.4 V Notes: 1. Pulse Test : Pulse width≤300μs, Duty cycle≤2% 2. Essentially independent of operating temperature |
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