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4N80L-TF1-T Datasheet(PDF) 3 Page - Unisonic Technologies |
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4N80L-TF1-T Datasheet(HTML) 3 Page - Unisonic Technologies |
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3 / 6 page  4N80 Power MOSFET UNISONICTECHNOLOGIESCO.,LTD 3 of 6 www.unisonic.com.tw QW-R502-505.F ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS VGS=0V, ID=250µA 800 V Breakdown Voltage Temperature Coefficient ΔBVDSS/ΔTJ ID=250μA,Referenced to 25°C 950 mV/°C Drain-Source Leakage Current IDSS VDS=800V, VGS=0V 10 µA VDS=640V, TC=125°C 100 µA Gate-Source Leakage Current Forward IGSS VDS=0V ,VGS=30V 100 nA Reverse VDS=0V ,VGS=-30V -100 nA ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS=VGS, ID=250µA 3.0 5.0 V Drain-Source On-State Resistance RDS(ON) VGS=10V, ID=2A 2.3 3.0 Ω DYNAMIC PARAMETERS Input Capacitance CISS VDS=25V,VGS=0V,f=1.0MHz 680 880 pF Output Capacitance COSS 75 100 pF Reverse Transfer Capacitance CRSS 8.6 12 pF SWITCHING PARAMETERS Total Gate Charge QG VDS=640V, VGS=10V, ID=4A (Note 1,2) 19 25 nC Gate-Source Charge QGS 4.2 nC Gate-Drain Charge QGD 9.1 nC Turn-ON Delay Time tD(ON) VDD=400V, ID=4A, RG=25Ω (Note 1,2) 16 40 ns Turn-ON Rise Time tR 45 100 ns Turn-OFF Delay Time tD(OFF) 35 80 ns Turn-OFF Fall Time tF 35 80 ns SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Maximum Body-Diode Continuous Current IS 4 A Maximum Body-Diode Pulsed Current ISM 16 A Drain-Source Diode Forward Voltage VSD IS =4A, VGS=0V 1.4 V Body Diode Reverse Recovery Time trr VGS=0V, IS=4A, dIF/dt=100A/μs (Note 1) 575 ns Body Diode Reverse Recovery Charge QRR 3.65 μC Note: 1. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2% 2. Essentially independent of operating temperature |
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