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5N65G-TM3-T Datasheet(PDF) 4 Page - Unisonic Technologies |
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5N65G-TM3-T Datasheet(HTML) 4 Page - Unisonic Technologies |
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4 / 7 page  5N65 Power MOSFET UNISONICTECHNOLOGIESCO.,LTD 4 of 7 www.unisonic.com.tw QW-R502-592.D ELECTRICAL CHARACTERISTICS (TC = 25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS VGS =0V, ID = 250μA 650 V Drain-Source Leakage Current IDSS VDS =650V, VGS = 0V 1 μA Gate-Source Leakage Current Forward IGSS VGS =30V, VDS = 0V 100 nA Reverse VGS =-30V, VDS = 0V -100 Breakdown Voltage Temperature Coefficient BV △ DSS/△TJ ID =250μA, Referenced to 25℃ 0.6 V/°C ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS =VGS, ID = 250μA 2.0 4.0 V Static Drain-Source On-State Resistance RDS(ON) VGS =10V, ID = 2.5A 2.0 2.4 Ω DYNAMIC CHARACTERISTICS Input Capacitance CISS VDS = 25V, VGS = 0V, f = 1.0MHz 515 670 pF Output Capacitance COSS 55 72 pF Reverse Transfer Capacitance CRSS 6.5 8.5 pF SWITCHING CHARACTERISTICS Turn-On Delay Time tD(ON) VDD = 325V, ID =5A, RG = 25Ω (Note 1, 2) 10 30 ns Turn-On Rise Time tR 42 90 ns Turn-Off Delay Time tD(OFF) 38 85 ns Turn-Off Fall Time tF 46 100 ns Total Gate Charge QG VDS = 520 V, ID = 5A, VGS = 10 V (Note 1, 2) 15 19 nC Gate-Source Charge QGS 2.5 nC Gate-Drain Charge QGD 6.6 nC DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS Drain-Source Diode Forward Voltage VSD VGS = 0 V, IS = 5A 1.4 V Maximum Continuous Drain-Source Diode Forward Current IS 5 A Maximum Pulsed Drain-Source Diode Forward Current ISM 20 A Reverse Recovery Time trr VGS = 0 V, IS =5A, dIF / dt = 100 A/μs (Note 1) 300 ns Reverse Recovery Charge QRR 2.2 μC Notes: 1. Pulse Test: Pulse width ≤ 300μs, Duty cycle ≤ 2% 2. Essentially independent of operating temperature |
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