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8N40G-TF1-T Datasheet(PDF) 2 Page - Unisonic Technologies |
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8N40G-TF1-T Datasheet(HTML) 2 Page - Unisonic Technologies |
2 / 6 page 8N40 Preliminary Power MOSFET UNISONICTECHNOLOGIESCO.,LTD 2 of 6 www.unisonic.com.tw QW-R502-577.c ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 400 V Gate-Source Voltage VGSS ±30 V Drain Current Continuous (TC=25°C) ID 8 A Pulsed (Note 2) IDM 32 A Avalanche Energy Single Pulsed (Note 3) EAS 320 mJ Repetitive (Note 2) EAR 2.5 mJ Power Dissipation TO-220 PD 104 W TO-220F1 39 W TO-252 75 W Derate above 25°C TO-220 0.832 W/°C TO-220F1 0.312 W/°C TO-252 0.6 W/°C Junction Temperature TJ +150 °C Storage Temperature TSTG -55~+150 °C Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating: Pulse width limited by maximum junction temperature 3. L = 10mH, IAS = 8A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C THERMAL DATA PARAMETER SYMBOL RATINGS UNIT Junction to Ambient TO-220/TO-220F1 θJA 62.5 °C/W TO-252 110 Junction to Case TO-220 θJC 1.2 °C/W TO-220F1 3.18 TO-252 2 |
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