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12N60G-TA3-T Datasheet(PDF) 4 Page - Unisonic Technologies |
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12N60G-TA3-T Datasheet(HTML) 4 Page - Unisonic Technologies |
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4 / 8 page  12N60 Power MOSFET UNISONICTECHNOLOGIESCO.,LTD 4 of 8 www.unisonic.com.tw QW-R502-170.K ELECTRICAL CHARACTERISTICS (TC =25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS VGS = 0 V, ID = 250 µA 600 V Drain-Source Leakage Current IDSS VDS = 600 V, VGS = 0 V 1 µA Gate-Source Leakage Current IGSS VGS = ±30 V, VDS = 0 V ±100 nA Breakdown Voltage Temperature Coefficient △BVDSS/△TJ ID=250µA, Referenced to 25°C 0.7 V/°C ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS = VGS, ID = 250μA 2.0 4.0 V Static Drain-Source On-State Resistance RDS(ON) VGS = 10V, ID = 6.0A 0.6 0.8 Ω DYNAMIC CHARACTERISTICS Input Capacitance CISS VDS = 25 V, VGS = 0 V, f = 1MHz 1480 1900 pF Output Capacitance COSS 200 270 pF Reverse Transfer Capacitance CRSS 25 35 pF Gate Resistance RG VDS =0V, VGS =0V, f =1MHz 0.2 1.2 Ω SWITCHING CHARACTERISTICS Turn-On Delay Time tD(ON) VDD = 300V, ID = 12A, RG = 25Ω (Note 1, 2) 30 70 ns Turn-On Rise Time tR 115 240 ns Turn-Off Delay Time tD(OFF) 95 200 ns Turn-Off Fall Time tF 85 180 ns Total Gate Charge QG VDS= 480V,ID= 12A, VGS= 10 V (Note 1, 2) 42 54 nC Gate-Source Charge QGS 8.6 nC Gate-Drain Charge QGD 21 nC SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Drain-Source Diode Forward Voltage VSD VGS = 0 V, IS = 12A 1.4 V Maximum Continuous Drain-Source Diode Forward Current IS 12 A Maximum Pulsed Drain-Source Diode Forward Current ISM 48 A Reverse Recovery Time trr VGS = 0 V, IS = 12A, dIF/dt = 100 A/µs (Note 1) 380 ns Reverse Recovery Charge QRR 3.5 µC Notes: 1. Pulse Test : Pulse width ≤300μs, Duty cycle ≤ 2% 2. Essentially independent of operating temperature |
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