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15N40L-TA3-T Datasheet(PDF) 3 Page - Unisonic Technologies |
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15N40L-TA3-T Datasheet(HTML) 3 Page - Unisonic Technologies |
3 / 6 page 15N40 Preliminary Power MOSFET UNISONICTECHNOLOGIESCO.,LTD 3 of 6 www.unisonic.com.tw QW-R502-633.b ELECTRICAL CHARACTERISTICS PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS ID=250µA, VGS=0V, TJ=25°C 400 V Breakdown Voltage Temperature Coefficient ∆BVDSS/∆TJ Reference to 25°C, ID=250µA 0.5 V/°C VDS=400V, VGS=0V, 1 µA Drain-Source Leakage Current IDSS VDS=320V, TC=125°C 10 µA Forward VGS=+30V, VDS=0V +100 nA Gate- Source Leakage Current Reverse IGSS VGS=-30V , VDS=0V -100 nA ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VGS=VDS, ID=250µA 2.0 4.0 V Static Drain-Source On-State Resistance RDS(ON) VGS=10V, ID=7.5A 0.26 0.35 Ω DYNAMIC PARAMETERS Input Capacitance CISS 1310 1750 pF Output Capacitance COSS 210 280 pF Reverse Transfer Capacitance CRSS VDS=25V, VGS=0V, f=1.0MHz 17 25 pF SWITCHING PARAMETERS Total Gate Charge QG 28 36 nC Gate to Source Charge QGS 8 nC Gate to Drain ("Miller") Charge QGD VDS=320V, VGS=10V, ID=15A (Note 1, 2) 12 nC Turn-ON Delay Time tD(ON) 26 62 ns Rise Time tR 55 120 ns Turn-OFF Delay Time tD(OFF) 72 154 ns Fall-Time tF VDD=200V, ID=15A, RG=25Ω (Note 1, 2) 40 90 ns SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Maximum Body-Diode Continuous Current IS 15 A Maximum Body-Diode Pulsed Current ISM 60 A Drain-Source Diode Forward Voltage VSD ISD=15A, VGS=0V 1.4 V Body Diode Reverse Recovery Time trr 333 ns Body Diode Reverse Recovery Charge QRR ISD=15A, VGS=0V, dIF/dt=100A/µs (Note 1) 3.24 µC Notes: 1. Pulse Test: Pulse width≤300µs; Duty Cycle≤2%. 2. Essentially Independent of Operating Temperature Typical Characteristics |
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