7N60

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

3 of 9

www.unisonic.com.tw

QW- R502-076.O



PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

600

V

Gate-Source Voltage

±30

V

Avalanche Current (Note 2)

7.4

A

Drain Current

Continuous

7.4

A

Pulsed (Note 2)

29.6

A

Avalanche Energy

Single Pulsed (Note 3)

530

mJ

Repetitive (Note 2)

14.2

mJ

Peak Diode Recovery dv/dt (Note 4)

dv/dt

4.5

V/ns

Power Dissipation

TO-220/TO-262/TO-263

142

W

TO-220F/TO-220F1

TO-220F3

48

TO-220F2

50

Junction Temperature

+150

°C

Storage Temperature

-55 ~ +150

°C

Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.



THERMAL DATA

PARAMETER

SYMBOL

RATINGS

UNIT

Junction to Ambient

62.5

°C/W

Junction to Case

TO-220/TO-262/TO-263

0.88

°C/W

TO-220F/TO-220F1

TO-220F3

2.6

TO-220F2

2.5