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7N60G-TQ2-T Datasheet(PDF) 4 Page - Unisonic Technologies |
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7N60G-TQ2-T Datasheet(HTML) 4 Page - Unisonic Technologies |
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4 / 9 page  7N60 Power MOSFET UNISONICTECHNOLOGIESCO.,LTD 4 of 9 www.unisonic.com.tw QW- R502-076.O ELECTRICAL CHARACTERISTICS (TC =25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS VGS = 0V, ID = 250μA 600 V Drain-Source Leakage Current IDSS VDS = 600V, VGS = 0V 1 μA Gate- Source Leakage Current Forward IGSS VGS = 30V, VDS = 0V 100 nA Reverse VGS = -30V, VDS = 0V -100 nA Breakdown Voltage Temperature Coefficient △BVDSS/△TJ ID=250μA,Referenced to 25°C 0.67 V/°C ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS = VGS, ID = 250μA 2.0 4.0 V Static Drain-Source On-State Resistance RDS(ON) VGS = 10V, ID = 3.7A 0.83 1.0 Ω DYNAMIC CHARACTERISTICS Input Capacitance CISS VDS=25V, VGS=0V, f=1.0 MHz 1200 1400 pF Output Capacitance COSS 125 155 pF Reverse Transfer Capacitance CRSS 40 50 pF SWITCHING CHARACTERISTICS Turn-On Delay Time tD(ON) VDD =300V, ID =7.4A, RG =25Ω (Note 1, 2) 65 95 ns Turn-On Rise Time tR 180 210 ns Turn-Off Delay Time tD(OFF) 320 360 ns Turn-Off Fall Time tF 220 260 ns SWITCHING CHARACTERISTICS Total Gate Charge QG VDS=480V, ID=7.4A, VGS=10V (Note 1, 2) 210 230 nC Gate-Source Charge QGS 11 nC Gate-Drain Charge QGD 38 nC DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS Drain-Source Diode Forward Voltage VSD VGS = 0V, IS = 7.4 A 1.4 V Maximum Continuous Drain-Source Diode Forward Current IS 7.4 A Maximum Pulsed Drain-Source Diode Forward Current ISM 29.6 A Reverse Recovery Time trr VGS = 0V, IS = 7.4 A, dIF / dt = 100A/μs (Note 1) 320 ns Reverse Recovery Charge QRR 2.4 μC Notes: 1. Pulse Test: Pulse width ≤ 300μs, Duty cycle≤2%. 2. Essentially independent of operating temperature. |
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