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12N80L-TC3-T Datasheet(PDF) 2 Page - Unisonic Technologies |
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12N80L-TC3-T Datasheet(HTML) 2 Page - Unisonic Technologies |
2 / 6 page 12N80 Power MOSFET UNISONICTECHNOLOGIESCO.,LTD 2 of 6 www.unisonic.com.tw QW-R502-594.G ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 800 V Gate-Source Voltage VGSS ±30 V Drain Current Continuous (TC=25°C) ID 12 A Pulsed (Note 2) IDM 48 A Avalanche Current (Note 2) IAR 12 A Power Dissipation TO-247 PD 360 W TO-3P 390 W TO-230 167 W TO-220F2 51 W Junction Temperature TJ +150 °C Storage Temperature TSTG -55~+150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating: Pulse width limited by maximum junction temperature. THERMAL DATA PARAMETER SYMBOL RATINGS UNIT Junction to Ambient TO-247 θJA 50 °C/W TO-3P 40 °C/W TO-220F2/TO-230 62.5 °C/W Junction to Case TO-247 θJC 0.35 °C/W TO-3P 0.32 °C/W TO-230 0.75 °C/W TO-220F2 2.43 °C/W |
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