IPD60R460CE datasheet(2/17 Pages) INFINEON

Part #	IPD60R460CE

Description	600V CoolMOS™ CE Power Transistor

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Manufacturer	INFINEON [Infineon Technologies AG]

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2

600VCoolMOS™CEPowerTransistor

IPD60R460CE,IPA60R460CE

Rev.2.0,2014-09-25

Final Data Sheet

tab

1

2

3

DPAK

TO-220FP

Drain

Pin 2, Tab

Gate

Pin 1

Source

Pin 3

1Description

CoolMOS™isarevolutionarytechnologyforhighvoltagepower

MOSFETs,designedaccordingtothesuperjunction(SJ)principleand

pioneeredbyInfineonTechnologies.CoolMOS™CEisa

price-performanceoptimizedplatformenablingtotargetcostsensitive

applicationsinConsumerandLightingmarketsbystillmeetinghighest

efficiencystandards.Thenewseriesprovidesallbenefitsofafast

switchingSuperjunctionMOSFETwhilenotsacrificingeaseofuseand

offeringthebestcostdownperformanceratioavailableonthemarket.

Features

•ExtremelylowlossesduetoverylowFOMRdson*QgandEoss

•Veryhighcommutationruggedness

•Easytouse/drive

•Pb-freeplating,Halogenfreemoldcompound

•Qualifiedforconsumergradeapplications

Applications

PFCstages,hardswitchingPWMstagesandresonantswitchingstages

fore.g.PCSilverbox,Adapter,LCD&PDPTVandLighting.

Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate

orseparatetotempolesisgenerallyrecommended.

Table1KeyPerformanceParameters

Parameter

Value

Unit

VDS @ Tj,max

650

V

RDS(on),max

460

m

Ω

Qg.typ

28

nC

ID,pulse

26

A

Eoss@400V

2.5

µJ

Body diode di/dt

500

A/µs

Type/OrderingCode

Package

Marking

RelatedLinks

IPD60R460CE

PG-TO 252

IPA60R460CE

PG-TO 220 FullPAK

6R460CE

see Appendix A

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IPD60R460CE Datasheet(PDF) 2 Page - Infineon Technologies AG

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