IPA80R310CE datasheet(6/15 Pages) INFINEON

Part #	IPA80R310CE

Description	High peak current capability

Download	15 Pages

Scroll/Zoom	100%

Manufacturer	INFINEON [Infineon Technologies AG]

Direct Link	http://www.infineon.com

Logo

6 / 15 page

6

800VCoolMOS™CEPowerTransistor

IPA80R310CE

Rev.2.1,2015-06-23

Final Data Sheet

4Electricalcharacteristics

atTj=25°C,unlessotherwisespecified

Table4Staticcharacteristics

Values

Min.

Typ.

Max.

Parameter

Symbol

Unit Note/TestCondition

Drain-source breakdown voltage

V(BR)DSS

800

-

V

VGS=0V,ID=0.25mA

Gate threshold voltage

V(GS)th

2.1

3.0

3.9

V

VDS=VGS,ID=1mA

Zero gate voltage drain current

IDSS

-

25

250

µA

VDS=800,VGS=0V,Tj=25°C

VDS=800,VGS=0V,Tj=150°C

Gate-source leakage current

IGSS

-

100

nA

VGS=20V,VDS=0V

Drain-source on-state resistance

RDS(on)

-

0.25

0.78

0.31

-

Ω

VGS=10V,ID=11A,Tj=25°C

VGS=10V,ID=11A,Tj=150°C

Gate resistance

RG

-

0.7

-

Ω

f=1MHz,opendrain

Table5Dynamiccharacteristics

Values

Min.

Typ.

Max.

Parameter

Symbol

Unit Note/TestCondition

Input capacitance

Ciss

-

2320

-

pF

VGS=0V,VDS=100V,f=1MHz

Output capacitance

Coss

-

90

-

pF

VGS=0V,VDS=100V,f=1MHz

Effective output capacitance,

energy related

1)

Co(er)

-

59

-

pF

VGS=0V,VDS=0...480V

Effective output capacitance,

time related

2)

Co(tr)

-

124

-

pF

ID=constant,VGS=0V,VDS=0...480V

Turn-on delay time

td(on)

-

25

-

ns

VDD=400V,VGS=10V,ID=16.7A,

RG=4.7

Ω;seetable9

Rise time

tr

-

15

-

ns

VDD=400V,VGS=10V,ID=16.7A,

RG=4.7

Ω;seetable9

Turn-off delay time

td(off)

-

72

-

ns

VDD=400V,VGS=10V,ID=16.7A,

RG=4.7

Ω;seetable9

Fall time

tf

-

6

-

ns

VDD=400V,VGS=10V,ID=16.7A,

RG=4.7

Ω;seetable9

Table6Gatechargecharacteristics

Values

Min.

Typ.

Max.

Parameter

Symbol

Unit Note/TestCondition

Gate to source charge

Qgs

-

12

-

nC

VDD=640V,ID=16.7A,VGS=0to10V

Gate to drain charge

Qgd

-

46

-

nC

VDD=640V,ID=16.7A,VGS=0to10V

Gate charge total

Qg

-

91

-

nC

VDD=640V,ID=16.7A,VGS=0to10V

Gate plateau voltage

Vplateau

-

6.0

-

V

VDD=640V,ID=16.7A,VGS=0to10V

1)Co(er)isafixedcapacitancethatgivesthesamestoredenergyasCosswhileVDSisrisingfrom0to480V

2)Co(tr)isafixedcapacitancethatgivesthesamechargingtimeasCosswhileVDSisrisingfrom0to480V

Similar Part No. - IPA80R310CE

Manufacturer	Part #	Datasheet	Description
Inchange Semiconductor ...	IPA80R310CE	261Kb / 2P	isc N-Channel MOSFET Transistor

More results

Similar Description - IPA80R310CE

Manufacturer	Part #	Datasheet	Description
Infineon Technologies A...	IPA80R460CE	1Mb / 15P	High peak current capability Rev.2.1,2015-06-23
Advanced Power Electron...	AP28G40GEM-HF	69Kb / 4P	High Peak Current Capability
Infineon Technologies A...	IPA80R1K4CE	1Mb / 15P	High peak current capability Rev.2.1,2015-06-23
Advanced Power Electron...	AP28G40GEH	140Kb / 5P	High Peak Current Capability
Vishay Siliconix	SIHG20N50C	189Kb / 8P	High Peak Current Capability Rev. C, 14-Mar-11
Advanced Power Electron...	AP28G40GEM-HF	52Kb / 3P	High Peak Current Capability
Infineon Technologies A...	IPA80R1K0CE	1Mb / 15P	High peak current capability Rev.2.1,2015-06-23
	IPA80R650CE	1Mb / 15P	High peak current capability Rev.2.1,2015-06-23
	IPI60R099CP	551Kb / 10P	High peak current capability 2014-05-28 revision:2.1
TE Connectivity Ltd	250	299Kb / 3P	High peak current carrying capability up to 6000A

More results

IPA80R310CE Datasheet(PDF) 6 Page - Infineon Technologies AG

IPA80R310CE Datasheet(HTML) 6 Page - Infineon Technologies AG

Similar Part No. - IPA80R310CE

Similar Description - IPA80R310CE

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15

Datasheet Download

Link URL