2N70Z

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

3 of 6

www.unisonic.com.tw

QW-R502-766.B

ELECTRICAL CHARACTERISTICS(Cont.)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

SWITCHING CHARACTERISTICS

Turn-On Delay Time

(Note 1, 2)

30

ns

Turn-On Rise Time

80

ns

Turn-Off Delay Time

50

ns

Turn-Off Fall Time

70

ns

Total Gate Charge

(Note 1, 2)

8.1

11

nC

Gate-Source Charge

1.7

nC

Gate-Drain Charge

4.4

nC

DRAIN-SOURCE DIODE CHARACTERISTICS

Drain-Source Diode Forward Voltage

1.4

V

Continuous Drain-Source Current

2.0

A

Pulsed Drain-Source Current

8.0

A

Reverse Recovery Time

di/dt = 100 A/μs (Note1)

260

ns

Reverse Recovery Charge

1.09

μC

Notes: 1. Pulse Test: Pulse width≤300μs, Duty cycle≤2%

2. Essentially independent of operating temperature