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9N70 Datasheet(PDF) 2 Page - Unisonic Technologies |
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9N70 Datasheet(HTML) 2 Page - Unisonic Technologies |
2 / 4 page 9N70 Preliminary Power MOSFET UNISONICTECHNOLOGIESCO.,LTD 2 of 4 www.unisonic.com.tw QW-R502-617.b ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 700 V Gate-Source Voltage VGSS ±30 V Drain Current Continuous VGS @ 10V TC=25°C ID 9 A TC=100°C 5 A Pulsed (Note 2) IDM 40 A Avalanche Current IAR 9 A Avalanche Energy Single Pulsed (Note 3) EAS 305 mJ Repetitive EAR 9 mJ Power Dissipation (TC=25°C) TO-220 PD 156 W TO-220F 44 Linear Derating Factor 1.25 W/°C Junction Temperature TJ +150 °C Storage Temperature TSTG -55~+150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Pulse width limited by safe operating area. 3. Starting TJ=25°C, VDD=50V, L=6.8mH, RG=25Ω, IAS=9A. THERMAL DATA PARAMETER SYMBOL RATINGS UNIT Junction to Ambien TO-220 θJA 62 °C/W TO-220F 62.5 Junction to Case TO-220 θJC 0.8 °C/W TO-220F 2.86 |
Similar Part No. - 9N70_15 |
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Similar Description - 9N70_15 |
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