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UT100N03G-TA3-T Datasheet(PDF) 4 Page - Unisonic Technologies |
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UT100N03G-TA3-T Datasheet(HTML) 4 Page - Unisonic Technologies |
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4 / 7 page  UT100N03-Q Power MOSFET UNISONICTECHNOLOGIESCO.,LTD 4 of 7 www.unisonic.com.tw QW-R502-625.B ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS VGS =0 V, ID =250 µA 30 V Drain-Source Leakage Current IDSS VDS=30 V,VGS =0 V 1 µA Gate-Source Leakage Current IGSS VDS =0 V, VGS = ±20 V ±100 nA ON CHARACTERISTICS (Note2) Gate Threshold Voltage VGS(TH) VDS =VGS, ID =250 µA 1 3 V Static Drain-Source On-Resistance RDS(ON) VGS =10 V, ID =50 A 5.3 mΩ VGS =4.5 V, ID =40 A 8 DYNAMIC PARAMETERS (Note3) Input Capacitance CISS VDS =15V, VGS =0V, f=1.0MHz 3800 pF Output Capacitance COSS 700 Reverse Transfer Capacitance CRSS 500 SWITCHING PARAMETERS (Note3) Total Gate Charge QG VDS =15V, VGS =5V, ID =16A 400 nC Gate Source Charge QGS 80 Gate Drain Charge QGD 100 Turn-ON Delay Time tD(ON) VDD=15V, ID =1A, RGEN =6Ω VGS =10 V 180 ns Turn-ON Rise Time tR 400 Turn-OFF Delay Time tD(OFF) 480 Turn-OFF Fall-Time tF 400 SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Drain-Source Diode Forward Voltage VSD IS=20 A,VGS=0 V 1.5 V Drain-Source Diode Forward Current IS 90 A Notes: 1. Pulse Test : Pulse Width < 300μs, Duty Cycle < 2% 2. Guaranteed by design, not subject to production testing |
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