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UT100N03G-TM3-T Datasheet(PDF) 4 Page - Unisonic Technologies |
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UT100N03G-TM3-T Datasheet(HTML) 4 Page - Unisonic Technologies |
4 / 8 page UT100N03 Power MOSFET UNISONICTECHNOLOGIESCO.,LTD 4 of 8 www.unisonic.com.tw QW-R502-193.H ELECTRICAL CHARACTERISTICS (TJ =25°С, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS VGS =0 V, ID =250 µA 30 V Drain-Source Leakage Current IDSS VDS=30 V,VGS =0 V 1 µA Gate-Source Leakage Current IGSS VDS =0 V, VGS = ±20 V ±100 nA ON CHARACTERISTICS (Note2) Gate Threshold Voltage VGS(TH) VDS =VGS, ID =250 µA 1 3 V VGS =10 V, ID =50 A 3.05 5.3 Static Drain-Source On-Resistance RDS(ON) VGS =4.5 V, ID =40 A 4.2 8 mΩ DYNAMIC PARAMETERS (Note3) Input Capacitance CISS 9500 Output Capacitance COSS 800 Reverse Transfer Capacitance CRSS VDS =15V, VGS =0V, f=1.0MHz 300 pF SWITCHING PARAMETERS (Note3) Total Gate Charge QG 50 65 Gate Source Charge QGS 20.8 Gate Drain Charge QGD VDS =15V, VGS =5V, ID =16A 19 nC Turn-ON Delay Time tD(ON) 25.7 50 Turn-ON Rise Time tR 10 20 Turn-OFF Delay Time tD(OFF) 128 200 Turn-OFF Fall-Time tF VDD=15V, ID =1A, RGEN =6Ω VGS =10 V 34 70 ns SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Drain-Source Diode Forward Voltage VSD IS=20 A,VGS=0 V 1.5 V Drain-Source Diode Forward Current IS 90 A Notes: 1. Pulse Test : Pulse Width < 300μs, Duty Cycle < 2%. 2. Guaranteed by design, not subject to production testing. |
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