UT4810DG-S08-R datasheet(3/5 Pages) UTC

Part #	UT4810DG-S08-R

Description	N-CHANNEL 30-V (D-S) MOSFET WITH SCHOTTKY DIODE

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Manufacturer	UTC [Unisonic Technologies]

Direct Link	http://www.utc-ic.com

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UT4810D

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

3 of 5

www.unisonic.com.tw

VER.A



ABSOLUTE MAXIMUM RATINGS (Ta = 25°C, unless otherwise specified)

PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

MOSFET

VDSS

30

V

Schottky

30

Gate-Source Voltage

MOSFET

VGSS

±20

V

Continuous Drain Current (TJ=150°C)

MOSFET

ID

7.5

A

Pulsed Drain Current

MOSFET

IDM

50

A

Continuous Source Current

MOSFET

IS

1.25

A

Average Forward Current

Schottky

IF

2.4

A

Pulsed Forward Current

Schottky

IFM

40

A

Avalanche Current

L=0.1mH

IAS

25

A

Single-Pulse Avalanche Energy

EAS

78

mJ

Power Dissipation

MOSFET

PD

1.38

W

Schottky

1.31

Junction Temperature

TJ

+150

°C

Storage Temperature

TSTG

-55 ~ +150

°C

Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.



THERMAL DATA

PARAMETER

SYMBOL

MIN

TYP

MAX

UNIT

Junction-to-Ambient

MOSFET

θJA

73

90

°C/W

Schottky

77

95



ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX UNIT

OFF CHARACTERISTICS

Zero Gate Voltage Drain Current

(MOSFET+ Schottky)

IDSS

VDS=30V, VGS=0V

0.007 0.100

mA

Gate-Body Leakage Current

IGSS

VDS=0V, VGS=±20V

±100

nA

ON CHARACTERISTICS

Gate Threshold Voltage

VGS(TH)

VDS=VGS, ID=250µA

1

3

V

On State Drain Current

ID(ON)

VDS≥5V, VGS=10V

20

A

Static Drain-Source On-Resistance

RDS(ON)

VGS=10V, ID=10A

10.5

13.5

mΩ

VGS=4.5V, ID=5A

16

20

DYNAMIC PARAMETERS

Gate Resistance

RG

0.2

0.55

0.9

Ω

SWITCHING PARAMETERS

Turn-ON Delay Time

tD(ON)

VDD=15V, RL=15Ω, RG=6 Ω,

ID≈1 A, VGEN=10V

17

30

ns

Turn-ON Rise Time

tR

13

20

ns

Turn-OFF Delay Time

tD(OFF)

45

90

ns

Turn-OFF Fall-Time

tF

15

25

ns

Total Gate Charge

QG

VDS=15V, VGS=5V, ID=10A

14.5

22

nC

Gate Source Charge

QGS

6.3

nC

Gate Drain Charge

QGD

4.7

nC

SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS

Diode Forward Voltage

VSD

IS=3.0 A, VGS =0 V

0.485 0.53

V

Body Diode Reverse Recovery Time

tRR

IF=3.0 A, dI/dt=100A/μs

36

70

ns

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