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UTT25P06G-TN3-R Datasheet(PDF) 3 Page - Unisonic Technologies |
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UTT25P06G-TN3-R Datasheet(HTML) 3 Page - Unisonic Technologies |
3 / 5 page UTT25P06 Power MOSFET UNISONICTECHNOLOGIESCO.,LTD 3 of 5 www.unisonic.com.tw QW-R502-595.E ABSOLUTE MAXIMUM RATINGS (TJ=25°C, unless otherwise noted) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS -60 V Gate-Source Voltage Continuous VGSS ±15 V Non−Repetitive (tP≤10ms) VGSM ±20 V Drain Current Continuous @ TA=25°C ID -27.5 A Pulsed (tP≤10µs) IDM -80 A Power Dissipation @TA=25°C TO-220/TO-220F PD 2 W TO-251/TO-252 1.25 W Junction Temperature TJ +175 °C Storage Temperature TSTG -55~+175 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. When surface mounted to an FR4 board using 1" pad size (Cu Area 1.127 in 2). 3. When surface mounted to an FR4 board using the minimum recommended pad size (Cu Area 0.412 in 2). THERMAL CHARACTERISTICS PARAMETER SYMBOL RATINGS UNIT Junction to Ambient TO-220/TO-220F θJA 62.5 °C/W TO-251/TO-252 100 °C/W Junction to Case TO-220 θJC 1.2 °C/W TO-220F 4.5 °C/W TO-251/TO-252 2.5 °C/W |
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