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UTT30N10L-TQ2-R Datasheet(PDF) 2 Page - Unisonic Technologies |
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UTT30N10L-TQ2-R Datasheet(HTML) 2 Page - Unisonic Technologies |
2 / 6 page UTT30N10 Power MOSFET UNISONICTECHNOLOGIESCO.,LTD 2 of 6 www.unisonic.com.tw QW-R502-661.F ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 100 V Gate-Source Voltage VGSS ±20 V Drain Current Continuous (VGS=10V) TC=25°C ID 30 A Pulsed IDM 120 A Single Pulsed Avalanche Energy (Note 2) EAS 55 mJ Power Dissipation TO-220/TO-263 PD 79 W TO-220F 47 TO-252 44 Junction Temperature TJ +150 °C Storage Temperature TSTG -55~+150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Starting TJ = 25°C, L = 0.27mH, IAS = 30A. 3. Pulse Width = 100s THERMAL DATA PARAMETER SYMBOL RATINGS UNIT Junction to Ambient TO-220/TO-220F TO-263 θJA 62 °C/W TO-252 110 Junction to Case TO-220/TO-263 θJC 1.58 °C/W TO-220F 2.64 TO-252 2.85 |
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