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UT3458G-AG6-R Datasheet(PDF) 3 Page - Unisonic Technologies |
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UT3458G-AG6-R Datasheet(HTML) 3 Page - Unisonic Technologies |
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3 / 4 page  UT3458 Power MOSFET UNISONICTECHNOLOGIESCO.,LTD 3 of 4 www.unisonic.com.tw QW-R502-578.D ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS ID=250µA, VGS=0V 60 V Drain-Source Leakage Current IDSS VDS=60V, VGS=0V 1 µA VDS=60V, VGS=0V, TJ=70°C 10 µA Gate- Source Leakage Current Forward IGSS VGS=+20V, VDS=0V +100 nA Reverse VGS=-20V, VDS=0V -100 nA ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS=VGS, ID=250µA 1.5 3 V Static Drain-Source On-State Resistance RDS(ON) VGS=10V, ID=3.2A 0.082 0.1 Ω VGS=4.5V, ID=2.8A 0.105 0.128 Ω On State Drain Current ID(ON) VGS=10V, VDS=5V 10 A SWITCHING PARAMETERS Input Capacitance CISS VDS =30 V, VGS = 0V, f = 1MHz 350 PF Output Capacitance COSS 40 Reverse Transfer Capacitance CRSS 20 Total Gate Charge QG VDS=10V, VDS=48V, ID=3.2A 7.1 11 nC VDS=4.5V, VDS=48V, ID=3.2A 3.5 5.5 Gate to Source Charge QGS VDS=4.5V, VDS=48V, ID=3.2A 1.1 Gate to Drain Charge QGD 0.95 Turn-ON Delay Time tD(ON) VDD=30V, ID≈2.5A, RL=12Ω, VGEN=4.5V, RG=1Ω(Note 1, 2) 16 25 ns Rise Time tR 17 30 Turn-OFF Delay Time tD(OFF) 12 20 Fall Time tF 10 15 Turn-ON Delay Time tD(ON) VDD=30V, ID≈2.5A, RL=12Ω, VGEN=10V, RG=2.5Ω(Note 1, 2) 5 10 Rise Time tR 12 20 Turn-OFF Delay Time tD(OFF) 18 30 Fall Time tF 10 15 SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Maximum Body-Diode Continuous Current IS 2.9 A Maximum Body-Diode Pulsed Current ISM 10 A Drain-Source Diode Forward Voltage VSD IS=2.5A, VGS=0V 0.8 1.2 V Body Diode Reverse Recovery Time tRR IF=2.5A, di/dt=100A/µs (Note 1) 25 50 ns Notes: 1. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2% 2. Guaranteed by design, not subject to production testing |
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