IDP30E65D1 datasheet(4/10 Pages) INFINEON

Part #	IDP30E65D1

Description	Emitter Controlled Diode Rapid 1 Series

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Manufacturer	INFINEON [Infineon Technologies AG]

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IDP30E65D1

EmitterControlledDiodeRapid1Series

Rev.2.1,2014-09-18

MaximumRatings

Foroptimumlifetimeandreliability,Infineonrecommendsoperatingconditionsthatdonotexceed80%ofthemaximumratingsstatedinthisdatasheet.

Parameter

Symbol

Value

Unit

Repetitivepeakreversevoltage,Tvj

≥25°C

VRRM

650

V

Diodeforwardcurrent,limitedbyTvjmax

TC=25°C

TC=100°C

IF

60.0

30.0

A

Diodepulsedcurrent,tplimitedbyTvjmax

IFpuls

90.0

A

Diode surge non repetitive forward current

TC=25°C,tp=10.0ms,sinehalfwave

IFSM

180.0

A

PowerdissipationTC=25°C

Ptot

143.0

W

Operating junction temperature

Tvj

-40...+175

°C

Storage temperature

Tstg

-55...+150

°C

Soldering temperature,

wave soldering 1.6 mm (0.063 in.) from case for 10s

260

°C

Mounting torque, M3 screw

Maximum of mounting processes: 3

M

0.6

Nm

ThermalResistance

Parameter

Symbol Conditions

Max.Value

Unit

Characteristic

Diode thermal resistance,

1)

junction - case

Rth(j-c)

1.05

K/W

Thermal resistance

junction - ambient

Rth(j-a)

62

K/W

ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified

Value

min.

typ.

max.

Parameter

Symbol Conditions

Unit

StaticCharacteristic

Diode forward voltage

VF

IF=30.0A

Tvj=25°C

Tvj=125°C

Tvj=175°C

-

1.35

1.30

1.26

1.70

-

V

Reverse leakage current

IR

VR=650V

Tvj=25°C

Tvj=175°C

-

4.0

800.0

40.0

-

µA

ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified

Value

min.

typ.

max.

Parameter

Symbol Conditions

Unit

DynamicCharacteristic

Internal emitter inductance

measured 5mm (0.197 in.) from

case

LE

-

7.0

-

nH

1) Please be aware that in non standard load conditions, due to high Rth(j-c), Tvj close to Tvjmax can be reached.

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