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IGZ50N65H5 Datasheet(PDF) 9 Page - Infineon Technologies AG |
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IGZ50N65H5 Datasheet(HTML) 9 Page - Infineon Technologies AG |
9 / 13 page 9 IGZ50N65H5 Highspeedseriesfifthgeneration Rev.2.1,2014-10-31 Figure 13. Typicalswitchingenergylossesasa functionofgateresistance (inductiveload,Tvj=150°C,VCE=400V, VGE=0/15V,IC=25A,dynamictestcircuitin Figure E) RG,GATERESISTANCE[ Ω] 5.0 7.5 10.0 12.5 15.0 17.5 20.0 22.5 25.0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 Eoff Eon Ets Figure 14. Typicalswitchingenergylossesasa functionofjunctiontemperature (inductiveload,VCE=400V,VGE=0/15V, IC=25A,RG(on)=12 Ω,RG(off)=20Ω,dynamic test circuit in Figure E) Tvj,JUNCTIONTEMPERATURE[°C] 25 50 75 100 125 150 175 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 Eoff Eon Ets Figure 15. Typicalswitchingenergylossesasa functionofcollectoremittervoltage (inductiveload,Tvj=150°C,VGE=0/15V, IC=25A,RG(on)=12 Ω,RG(off)=20Ω,dynamic test circuit in Figure E) VCE,COLLECTOR-EMITTERVOLTAGE[V] 200 250 300 350 400 0.0 0.2 0.4 0.6 0.8 1.0 Eoff Eon Ets Figure 16. Typicalgatecharge (IC=50A) QG,GATECHARGE[nC] 0 20 40 60 80 100 120 0 2 4 6 8 10 12 14 16 VCE = 130V VCE = 520V |
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