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2N70KL-TN3-R Datasheet(PDF) 2 Page - Unisonic Technologies |
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2N70KL-TN3-R Datasheet(HTML) 2 Page - Unisonic Technologies |
2 / 6 page 2N70K Power MOSFET UNISONICTECHNOLOGIESCO.,LTD 2 of 6 www.unisonic.com.tw QW-R502-930.B ABSOLUTE MAXIMUM RATINGS (TC = 25°С, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 700 V Gate-Source Voltage VGSS ±30 V Avalanche Current (Note 2) IAR 2.0 A Drain Current Continuous ID 2.0 A Pulsed (Note 2) IDM 8.0 A Avalanche Energy Single Pulsed (Note 3) EAS 20 mJ Repetitive (Note 2) EAR 2.8 mJ Peak Diode Recovery dv/dt (Note 4) dv/dt 4.5 V/ns Power Dissipation TO-220F2 PD 40 W TO-252 30 Junction Temperature TJ +150 °С Operating Temperature TOPR -55 ~ +150 °С Storage Temperature TSTG -55 ~ +150 °С Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating : Pulse width limited by TJ. 3. L=10mH, IAS=2.0A, VDD=50V, RG=25 Ω, Starting TJ = 25°C 4. ISD≤2.0A, di/dt≤200A/μs, VDD≤ BVDSS, Starting TJ = 25°C THERMAL DATA PARAMETER SYMBOL RATINGS UNIT Junction to Ambient TO-220F2 θJA 62.5 °С/W TO-252 110 Junction to Case TO-220F2 θJC 3.13 °С/W TO-252 4.24 |
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