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4N65G-TM3-T Datasheet(PDF) 4 Page - Unisonic Technologies |
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4N65G-TM3-T Datasheet(HTML) 4 Page - Unisonic Technologies |
4 / 7 page 4N65-E Power MOSFET UNISONICTECHNOLOGIESCO.,LTD 4 of 7 www.unisonic.com.tw QW-R502-964.E ELECTRICAL CHARACTERISTICS (TC =25°С, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS VGS = 0 V, ID = 250μA 650 V Drain-Source Leakage Current IDSS VDS = 650 V, VGS = 0 V 10 μA Forward VGS = 30 V, VDS = 0 V 100 nA Gate-Source Leakage Current Reverse IGSS VGS = -30 V, VDS = 0 V -100 nA Breakdown Voltage Temperature Coefficient △ BVDSS/△TJ ID=250μA, Referenced to 25°C 0.6 V/°С ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS = VGS, ID = 250μA 2.0 4.0 V Static Drain-Source On-State Resistance RDS(ON) VGS = 10 V, ID = 2.2A 2.3 2.5 Ω DYNAMIC CHARACTERISTICS Input Capacitance CISS 500 580 pF Output Capacitance COSS 90 110 pF Reverse Transfer Capacitance CRSS VDS = 25 V, VGS = 0V, f = 1MHz 15 18 pF SWITCHING CHARACTERISTICS Turn-On Delay Time tD(ON) 42 80 ns Turn-On Rise Time tR 60 100 ns Turn-Off Delay Time tD(OFF) 135 175 ns Turn-Off Fall Time tF VDS = 325V, ID = 4.0A, RG = 25Ω (Note 1, 2) 70 110 ns Total Gate Charge QG 70 90 nC Gate-Source Charge QGS 15 21 nC Gate-Drain Charge QGD VDS= 520V, ID= 4.0A, VGS= 10V (Note 1, 2) 21 27 nC SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Drain-Source Diode Forward Voltage VSD VGS = 0 V, IS = 4.4A 1.4 V Maximum Continuous Drain-Source Diode Forward Current IS 4.4 A Maximum Pulsed Drain-Source Diode Forward Current ISM 17.6 A Reverse Recovery Time trr 250 ns Reverse Recovery Charge QRR VGS = 0V, IS = 4.4A, dIF/dt = 100 A/μs (Note 1) 1.5 μC Note: 1. Pulse Test: Pulse width≤300μs, Duty cycle≤2%. 2. Essentially independent of operating temperature. |
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