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4N65L-TMS4-T Datasheet(PDF) 8 Page - Unisonic Technologies |
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4N65L-TMS4-T Datasheet(HTML) 8 Page - Unisonic Technologies |
8 / 9 page 4N65-Q Power MOSFET UNISONICTECHNOLOGIESCO.,LTD 8 of 9 www.unisonic.com.tw QW-R502-963.E TYPICAL CHARACTERISTICS(Cont.) 1200 0 0.1 Drain-SourceVoltage, VDS (V) 1000 200 110 Ciss 800 600 Notes: 1. VGS=0V 2. f = 1MHz Ciss=Cgs+Cgd (Cds=shorted) Coss=Cds+Cgd Crss=Cgd Capacitance Characteristics (Non-Repetitive) 0 Total Gate Charge, QG (nC) 5 15 25 Note: ID=4A 8 10 12 10 6 4 2 0 VDS=120V VDS=300V VDS=480V 20 Gate Charge Characteristics Coss Crss 400 |
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