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6N70G-TM3-T Datasheet(PDF) 3 Page - Unisonic Technologies |
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6N70G-TM3-T Datasheet(HTML) 3 Page - Unisonic Technologies |
3 / 6 page 6N70-C Preliminary Power MOSFET UNISONICTECHNOLOGIESCO.,LTD 3 of 6 www.unisonic.com.tw QW-R502-A52.b ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS ID=250µA, VGS=0V 700 V Breakdown Voltage Temperature Coefficient ∆BVDSS/∆TJ ID=250µA 0.79 V/°C Drain-Source Leakage Current IDSS VDS=700V 25 µA VDS=560V, TC=125°C 250 µA Gate-Source Leakage Current Forward IGSS VGS=+30V, VDS=0V +100 nA Reverse VGS=-30V, VDS=0V -100 nA ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS=VGS, ID=250µA, VDS=5V 2.0 4.0 V Static Drain-Source On-State Resistance RDS(ON) VGS=10V, ID=3A (Note 1) 1.5 1.8 Ω DYNAMIC PARAMETERS Input Capacitance CISS VGS=0V, VDS=25V, f=1.0MHz (Note 1, 2) 700 1000 pF Output Capacitance COSS 79 120 pF Reverse Transfer Capacitance CRSS 6 13 pF SWITCHING PARAMETERS Turn-ON Delay Time tD(ON) VDD=30V, ID=1A, RG=25Ω 55 75 ns Rise Time tR 50 70 ns Turn-OFF Delay Time tD(OFF) 180 210 ns Fall-Time tF 50 70 ns Total Gate Charge QG VGS=10V, VDS=50V, ID=1.3A (Note 1, 2) 25 40 nC Gate to Source Charge QGS 6.5 nC Gate to Drain Charge QGD 4.8 nC SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Maximum Body-Diode Continuous Current IS Integral reverse pn-diode in the MOSFET 6 A Maximum Body-Diode Pulsed Current (Note 3) ISM 24 A Drain-Source Diode Forward Voltage (Note 2) VSD IS=6A, VGS=0V, TJ = 25°C 1.4 V Notes: 1. Pulse Test: Pulse width ≤ 250µs, Duty cycle ≤ 2% 2. Essentially independent of operating temperature 3. Repetitive Rating: Pulse width limited by maximum junction temperature |
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