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10N65L-TF3-T Datasheet(PDF) 3 Page - Unisonic Technologies |
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10N65L-TF3-T Datasheet(HTML) 3 Page - Unisonic Technologies |
3 / 6 page 10N65-C Preliminary Power MOSFET UNISONICTECHNOLOGIESCO.,LTD 3 of 6 www.unisonic.com.tw QW-R502-A79.a ELECTRICAL CHARACTERISTICS( TC=25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS VGS=0V, ID= 250μA 650 V Drain-Source Leakage Current IDSS VDS=650V, VGS=0V 1 µA Gate-Source Leakage Current Forward IGSS VGS=30V, VDS=0V 100 nA Reverse VGS=-30V, VDS=0V -100 nA Breakdown Voltage Temperature Coefficient ∆BVDSS/∆TJ ID=250 µA, Referenced to 25°C 0.7 V/°C ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS=VGS, ID=250μA 2.0 4.0 V Static Drain-Source On-State Resistance RDS(ON) VGS=10V, ID=4.75A 0.60 0.80 Ω DYNAMIC CHARACTERISTICS Input Capacitance CISS VDS=25V, VGS=0V, f=1.0 MHz 1520 1750 pF Output Capacitance COSS 160 210 pF Reverse Transfer Capacitance CRSS 11 15 pF SWITCHING CHARACTERISTICS Turn-On Delay Time tD(ON) VDD=30V, ID=0.5A, RG=25Ω (Note1, 2) 95 120 ns Turn-On Rise Time tR 128 160 ns Turn-Off Delay Time tD(OFF) 228 260 ns Turn-Off Fall Time tF 115 130 ns Total Gate Charge QG VDS=50V, ID=1.3A, VGS=10V (Note1, 2) 40 60 nC Gate-Source Charge QGS 12 nC Gate-Drain Charge QGD 8.8 nC DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS Drain-Source Diode Forward Voltage VSD VGS=0V, IS=10A 1.4 V Maximum Continuous Drain-Source Diode Forward Current IS 10 A Maximum Pulsed Drain-Source Diode Forward Current ISM 38 A Reverse Recovery Time trr VGS=0V, IS=10A, dIF/dt=100A/µs (Note1) 420 ns Reverse Recovery Charge QRR 4.2 µC Notes: 1. Pulse Test : Pulse width ≤300µs, Duty cycle ≤2% 2. Essentially independent of operating temperature |
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