2N7002KW

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

2 of 4

www.unisonic.com.tw

QW-R209-033.A



PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

60

V

Gate-Source Voltage

±20

V

Drain Current

Continuous

300

mA

Pulse(Note 2)

800

Power Dissipation

200

mW

1.6

mW/°C

Junction Temperature

+150

°C

Storage Temperature

-55 ~ +150

°C

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.



PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

60

V

Drain-Source Leakage Current

1.0

µA

Gate-Source Leakage Current

±10

µA

ON CHARACTERISTICS

Gate Threshold Voltage

1.0

1.85

2.5

V

Static Drain-Source On-Resistance (Note)

2

Ω

4

DYNAMIC PARAMETERS

Input Capacitance

25

50

pF

Output Capacitance

10

25

pF

Reverse Transfer Capacitance

3.0

5.0

pF

SWITCHING PARAMETERS

Turn-ON Delay Time

12

20

ns

Turn-OFF Delay Time

20

30

ns

DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS

Drain-Source Diode Forward Voltage

0.88

1.5

V

Maximum Pulsed Drain-Source Diode

Forward Current

0.8

A

Maximum Continuous Drain-Source Diode

Forward Current

300

mA

Notes: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch. Minimum land pad size.

2. Pulse width≦300μs, Duty cycle≦1%