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2N60KL-TF3T-T Datasheet(PDF) 4 Page - Unisonic Technologies |
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2N60KL-TF3T-T Datasheet(HTML) 4 Page - Unisonic Technologies |
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4 / 7 page  2N60K-TA Power MOSFET UNISONICTECHNOLOGIESCO.,LTD 4 of 7 www.unisonic.com.tw QW-R205-032.B ELECTRICAL CHARACTERISTICS (TC =25°С, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS VGS = 0V, ID = 250μA 600 V VDS = 600V, VGS = 0V 10 μA Drain-Source Leakage Current IDSS VDS = 480V, TC =125°С 100 μA Forward VGS = 30V, VDS = 0V 100 nA Gate-Source Leakage Current Reverse IGSS VGS = -30V, VDS = 0V -100 nA Breakdown Voltage Temperature Coefficient △BVDSS △ /TJ ID=250μA, Referenced to 25°C 0.4 V/°С ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS = VGS, ID = 250μA 2.0 4.0 V Static Drain-Source On-State Resistance RDS(ON) VGS = 10V, ID =1A 4.0 5.0 Ω DYNAMIC CHARACTERISTICS Input Capacitance CISS 205 290 pF Output Capacitance COSS 40 45 pF Reverse Transfer Capacitance CRSS VDS =25V, VGS =0V, f =1MHz 16 20 pF SWITCHING CHARACTERISTICS Turn-On Delay Time tD (ON) 23 40 ns Turn-On Rise Time tR 40 50 ns Turn-Off Delay Time tD(OFF) 80 100 ns Turn-Off Fall Time tF VDD =30V, ID =0.5A, RG=25Ω (Note 1, 2) 40 55 ns Total Gate Charge QG 11 13 nC Gate-Source Charge QGS 4.4 nC Gate-Drain Charge QGD VDS=50V, VGS=1.0V, ID=1.3A (Note 1, 2) 1.3 nC DRAIN-SOURCE DIODE CHARACTERISTICS Drain-Source Diode Forward Voltage VSD VGS = 0 V, ISD = 2.0 A 1.4 V Continuous Drain-Source Current ISD 2.0 A Pulsed Drain-Source Current ISM 8.0 A Notes: 1. Pulse Test: Pulse width ≤ 300μs, Duty cycle≤2% 2. Essentially independent of operating temperature |
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