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18T10L-TN3-R Datasheet(PDF) 2 Page - Unisonic Technologies |
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18T10L-TN3-R Datasheet(HTML) 2 Page - Unisonic Technologies |
2 / 3 page 18T10 Preliminary Power MOSFET UNISONICTECHNOLOGIESCO.,LTD 2 of 3 www.unisonic.com.tw VER.a ABSOLUTE MAXIMUM RATINGS (TA=25°C) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 100 V Gate-Source Voltage VGSS ±20 V Drain Current Continuous VGS @ 10V TC=25°C ID 9 A TC=100°C 5.6 A Pulsed (Note 1) IDM 30 A Total Power Dissipation TC=25°C PD 27.8 W TA=25°C 1.3 W Junction Temperature TJ 150 °C Storage Temperature Range TSTG -55~+150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. THERMAL CHARACTERISTICS PARAMETER SYMBOL RATINGS UNIT Junction to Ambient θJA 110 °C/W Junction to Case θJC 4.5 °C/W ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS ID=250µA, VGS=0V 100 V Drain-Source Leakage Current IDSS VDS=80V, VGS=0V 25 µA VDS=80V, VGS=0V, TJ=125°C 250 µA Gate-Source Leakage Current Forward IGSS VGS=+20V, VDS=0V +100 nA Reverse VGS=-20V, VDS=0V -100 nA ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS=VGS, ID=250µA 1 3 V Static Drain-Source On-State Resistance (Note 3) RDS(ON) VGS=10V, ID=5A 160 mΩ VGS=4.5V, ID=1A 440 mΩ Forward Transconductance gFS VDS=10V, ID=5A 5 S DYNAMIC PARAMETERS Input Capacitance CISS VGS=0V, VDS=25V, f=1.0MHz 400 640 pF Output Capacitance COSS 55 pF Reverse Transfer Capacitance CRSS 35 pF SWITCHING PARAMETERS Total Gate Charge (Note 3) QG VGS=4.5V, VDS=80V, ID=5A 23 50 nC Gate to Source Charge QGS 5.25 nC Gate to Drain ("Miller") Charge QGD 5.5 nC Turn-ON Delay Time (Note 3) tD(ON) VDS=30V, ID=0.5A, RG=25Ω, VGS=10V 33 ns Rise Time tR 28 ns Turn-OFF Delay Time tD(OFF) 160 ns Fall-Time tF 45 ns SOURCE- DRAIN DIODE Forward On Voltage (Note 3) VSD IS=5A, VGS=0V 1.3 V Notes: 1. Pulse width limited by Max. junction temperature. 2. Pulse test. |
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