 |
Electronic Components Datasheet Search |
|
|
Electronic Components Datasheet Search |
|
UF7476G-S08-R Datasheet(PDF) 4 Page - Unisonic Technologies |
|
||||||||||||||||||||||||||||||
UF7476G-S08-R Datasheet(HTML) 4 Page - Unisonic Technologies |
|
|
4 / 6 page  UF7476 Preliminary POWER MOSFET UNISONICTECHNOLOGIESCO.,LTD 4 of 6 www.unisonic.com.tw QW-R502-A70.b ELECTRICAL CHARACTERISTICS (TJ = 25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Maximum Body Diode Continuous Source Current IS MOSFET symbol showing the integral reverse p-n junction diode. 2.5 A Maximum Body Diode Pulsed Current (Note 1) ISM 120 A Drain-Source Diode Forward Voltage (Note) VSD TJ=25°C, IS=12A, VGS=0V 0.87 1.2 V TJ=125°C, IS=12A, VGS=0V 0.73 V Body Diode Reverse Recovery Time tRR TJ=25°C, IF=12A, VR=12V, di/dt=100A/µs (Note) 55 82 ns Body Diode Reverse Recovery Charge QRR 59 89 nC Body Diode Reverse Recovery Time tRR TJ=125°C, IF=12A, VR=12V, di/dt=100A/µs (Note) 54 81 ns Body Diode Reverse Recovery Charge QRR 60 90 nC Notes: Pulse width ≤ 300µs, Duty cycle ≤ 2% |
Similar Part No. - UF7476G-S08-R |
|
Similar Description - UF7476G-S08-R |
|
|
|
Link URL |
| Privacy Policy |
| ALLDATASHEET.NET |
| Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |
English ▼
English
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
Indian
Mexican
British
New Zealand
