UF830-F

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

2 of 6

www.unisonic.com.tw

QW-R502-A94.B



PARAMETER

SYMBOL

RATINGS

UNIT

500

V

500

V

Gate to Source Voltage

±30

V

Continuous

4.5

A

Drain Current

Pulsed

18

A

TO-220

73

W

TO-220F

38

W

TO-251S/TO-252

46

W

Single Pulse Avalanche Energy Rating (Note 2)

300

mJ

Junction Temperature

+150

°C

Storage Temperature

-55 ~ +150

°C

Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.



THERMAL DATA

PARAMETER

SYMBOL

RATINGS

UNIT

TO-220

62.5

°C/W

TO-220F

62.5

°C/W

Junction to Ambient

TO-251S/TO-252

100.3

°C/W

TO-220

1.71

°C/W

TO-220F

3.31

°C/W

Junction to Case

TO-251S/TO-252

2.7

°C/W



PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

Drain-Source Breakdown Voltage

500

V

Gate Threshold Voltage

2.0

4.0

V

On-State Drain Current (Note 1)

4.5

A

25

μA

Drain-Source Leakage Current

250

μA

Gate-Source Leakage Current

±100

nA

Static Drain-Source On-State Resistance

1.1

1.5

Ω

Forward Transconductance (Note 1)

2.5

4.2

S

Turn-On Delay Time

38

60

ns

Turn-On Rise Time

36

50

ns

Turn-Off Delay Time

155

170

ns

Turn-Off Fall Time

70

90

ns

Notes: 1. Pulse Test: Pulse width≤300μs, Duty Cycle≤2%.

2. MOSFET Switching Times are Essentially Independent of Operating Temperature.

3. Gate Charge is Essentially Independent of Operating Temperature.