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UT4114G-S08-R Datasheet(PDF) 2 Page - Unisonic Technologies |
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UT4114G-S08-R Datasheet(HTML) 2 Page - Unisonic Technologies |
2 / 4 page UT4114 Preliminary Power MOSFET UNISONICTECHNOLOGIESCO.,LTD 2 of 4 www.unisonic.com.tw QW-R502-A78.b ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 20 V Gate-Source Voltage VGSS ±16 V Drain Current t Continuous (TJ=150°C) TC= 25°C ID 20 A TC= 70°C 18.2 Pulsed IDM 50 A Continuous Source - Drain Diode Current TC= 25°C IS 5.1 A Single Pulsed Avalanche Current L = 0.1mH IAS 30 A Single Pulsed Avalanche Energy EAS 45 mJ Power Dissipation TC= 25°C PD 5.7 W Junction Temperature TJ -55 ~ 150 °C Storage Temperature TSTG -55 ~ 150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Based on TC = 25 °C 3. Maximum under steadg state conditions is 85 °C/W. 4. Package limited. THERMAL DATA PARAMETER SYMBOL RATINGS UNIT Junction to Ambient (Note) t ≤10 s θJA 50 °C/W Note: Surface Mounted on 1×1 FR4 board. ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS ID=250µA, VGS=0V 20 V VDS Temperature Coefficient △ VDS/TJ ID=250µA 19 mV/°C Drain-Source Leakage Current IDSS VDS=20V, VGS=0V 1 µA VDS=20V, VGS=0V, TJ=55°C 10 Gate- Source Leakage Current Forward IGSS VGS=+16V, VDS=0V +100 nA Reverse VGS=-16V, VDS=0V -100 nA ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS=VGS, ID=250µA 1.0 2.1 V VGS(TH) Temperature Coefficient △ VGS/TJ ID=250µA -5.3 mV/°C Static Drain-Source On-State Resistance (Note 1) RDS(ON) VGS=10V, ID=10A 4.9 6 mΩ VGS=4.5V, ID=7A 5.6 7 mΩ Forward Transconductance (Note 1) gFS VDS=10V, ID=10A 55 S On State Drain Current (Note 1) ID(ON) VGS=10V, VDS≥5V 30 A DYNAMIC PARAMETERS (Note 2) Input Capacitance CISS VGS=0V, VDS=10V, f=1.0MHz 3700 pF Output Capacitance COSS 745 pF Reverse Transfer Capacitance CRSS 315 pF |
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