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UTT6N10ZG-AA3-R Datasheet(PDF) 2 Page - Unisonic Technologies |
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UTT6N10ZG-AA3-R Datasheet(HTML) 2 Page - Unisonic Technologies |
2 / 3 page UTT6N10Z Power MOSFET UNISONICTECHNOLOGIESCO.,LTD 2 of 3 www.unisonic.com.tw QW-R502-921.B ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise noted) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 100 V Gate-Source Voltage VGSS ±20 V Drain Current Continuous ID 6 A Pulsed IDM 24 A Single Pulsed Avalanche Energy (Note 3) EAS 12 mJ Power Dissipation (TA=25°C) (Note 1) SOT-223 PD 0.8 W TO-252 1.25 W Junction Temperature TJ 150 °C Storage Temperature Range TSTG -55~+150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. THERMAL CHARACTERISTICS PARAMETER SYMBOL RATINGS UNIT Junction to Ambient (Note 1) SOT-223 θJA 150 °C/W TO-252 100 °C/W Junction to Case SOT-223 θJC 12 °C/W TO-252 7.5 °C/W ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS ID=250µA, VGS=0V 100 V Drain-Source Leakage Current IDSS VDS=80V, VGS=0V 1 µA Gate-Source Leakage Current Forward IGSS VGS=+20V, VDS=0V +10 µA Reverse VGS=-20V, VDS=0V -10 µA ON CHARACTERISTICS (Note 2) Gate Threshold Voltage VGS(TH) VDS=VGS, ID=250µA 1.0 2.2 V Static Drain-Source On-State Resistance RDS(ON) VGS=10V, ID=3A 90 108 mΩ VGS=4.5V, ID=1A 95 153 mΩ DYNAMIC PARAMETERS Input Capacitance CISS VGS=0V, VDS=25V, f=1.0MHz 720 900 pF Output Capacitance COSS 85 65 pF Reverse Transfer Capacitance CRSS 33 60 pF SWITCHING PARAMETERS Total Gate Charge QG VGS=10V, VDD=50V, ID=1.3A IG=100µA 28 nC Gate to Source Charge QGS 3.9 nC Gate to Drain Charge QGD 5.3 nC Turn-ON Delay Time tD(ON) VDD=30V, ID=0.5A, VGS=10V, RGEN=25Ω 30 ns Rise Time tR 50 ns Turn-OFF Delay Time tD(OFF) 280 ns Fall-Time tF 80 ns SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Drain-Source Diode Forward Voltage VSD IS=6A, VGS=0V (Note 2) 0.8 1.3 V Maximum Body-Diode Continuous Current IS 6 A Source Current Pulsed ISM 24 A Notes: 1. θJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. θJC is guaranteed by design while θJA is determined by the user’s board deign. 2. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2% 3. Starting TJ = 25°C, L =11mH, IAS =6A, VDD = 90V, VGS=10V. |
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