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4N65KL-TA3-T Datasheet(PDF) 4 Page - Unisonic Technologies |
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4N65KL-TA3-T Datasheet(HTML) 4 Page - Unisonic Technologies |
4 / 7 page 4N65K-TA Preliminary Power MOSFET UNISONICTECHNOLOGIESCO.,LTD 4 of 7 www.unisonic.com.tw QW-R205-039.b ELECTRICAL CHARACTERISTICS (TC =25°С, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS VGS = 0 V, ID = 250μA 650 V Drain-Source Leakage Current IDSS VDS = 650 V, VGS = 0 V 10 μA Forward VGS = 30 V, VDS = 0 V 100 nA Gate-Source Leakage Current Reverse IGSS VGS = -30 V, VDS = 0 V -100 nA Breakdown Voltage Temperature Coefficient △ BVDSS/△TJ ID=250μA, Referenced to 25°C 0.6 V/°С ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS = VGS, ID = 250μA 3.0 5.0 V Static Drain-Source On-State Resistance RDS(ON) VGS = 10 V, ID = 2.2A 2.8 Ω DYNAMIC CHARACTERISTICS Input Capacitance CISS 320 520 pF Output Capacitance COSS 50 75 pF Reverse Transfer Capacitance CRSS VDS = 25 V, VGS = 0V, f = 1MHz 5 10 pF SWITCHING CHARACTERISTICS Total Gate Charge QG 14 18 nC Gate-Source Charge QGS 5 nC Gate-Drain Charge QGD VDS = 50V, ID= 1.3A, VGS = 10V (Note 1, 2) 2.8 nC Turn-On Delay Time tD(ON) 48 68 ns Turn-On Rise Time tR 45 56 ns Turn-Off Delay Time tD(OFF) 74 90 ns Turn-Off Fall Time tF VDD = 30V, ID = 0.5A, RG = 25Ω (Note 1, 2) 34 45 ns SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Drain-Source Diode Forward Voltage VSD VGS = 0 V, IS = 4.4A 1.4 V Maximum Continuous Drain-Source Diode Forward Current IS 4.4 A Maximum Pulsed Drain-Source Diode Forward Current ISM 17.6 A Notes: 1. Pulse Test: Pulse width ≤ 300μs, Duty cycle≤2% 2. Essentially independent of operating temperature |
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