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7NM70G-TMS2-T Datasheet(PDF) 4 Page - Unisonic Technologies |
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7NM70G-TMS2-T Datasheet(HTML) 4 Page - Unisonic Technologies |
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4 / 7 page  7NM70 Power MOSFET UNISONICTECHNOLOGIESCO.,LTD 4 of 7 www.unisonic.com.tw QW-R205-047.B ELECTRICAL CHARACTERISTICS (TC =25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS VGS = 0V, ID = 250μA 700 V VDS = 700V, VGS = 0V 1 μA Drain-Source Leakage Current IDSS VDS = 560V, TC = 125°C 1 μA Forward VGS = 30V, VDS = 0V 100 nA Gate-Source Leakage Current Reverse IGSS VGS = -30V, VDS = 0V -100 nA Breakdown Voltage Temperature Coefficient △BVDSS/△TJ ID = 250mA Referenced to 25°C 0.67 V/°C ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS = VGS, ID = 250μA 2.0 4.0 V Drain-Source ON-State Resistance RDS(ON) VGS = 10V, ID = 3.5A 1.2 Ω DYNAMIC CHARACTERISTICS Input Capacitance CISS 340 pF Output Capacitance COSS 120 pF Reverse Transfer Capacitance CRSS VDS = 25V, VGS = 0V, f = 1MHz 6.5 pF SWITCHING CHARACTERISTICS Total Gate Charge QG 19 nC Gate-Source Charge QGS 5 nC Gate-Drain Charge QDD VDS= 50V, VGS= 10V ID= 1.3A, , IG=100μA (Note 1, 2) 5.2 nC Turn-on Delay Time tD(ON) 50 ns Turn-on Rise Time tR 70 ns Turn-off Delay Time tD(OFF) 140 ns Turn-off Fall Time tF VDD = 30V, VGS= 10V ID = 0.5A, RG = 25Ω (Note 1, 2) 65 ns SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Drain-Source Diode Forward Voltage VSD VGS = 0V, IS =7.0A 1.4 V Maximum Continuous Drain-Source Diode Forward Current IS 7.0 A Maximum Pulsed Drain-Source Diode Forward Current ISM 28 A Reverse Recovery Time trr 317 ns Reverse Recovery Charge (Note 1) QRR VGS = 0 V, IS = 7.0A, dIF/dt = 100 A/μs 3.03 μC Notes: 1. Pulse Test: Pulse width ≤ 300μs, Duty cycle ≤ 2% 2. Essentially independent of operating temperature |
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