14N65K-MT

Preliminary

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

2 of 5

www.unisonic.com.tw

QW-R502-B11.d



PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

650

V

Gate-Source Voltage

±30

V

Continuous Drain Current

14

A

Pulsed Drain Current (Note 2)

48

A

Avalanche Current (Note 2)

14

A

Single Pulsed Avalanche Energy (Note 3)

325

mJ

Peak Diode Recovery dv/dt (Note 4)

dv/dt

4.5

V/ns

150

W

Junction Temperature

+150

°C

Storage Temperature

-55~+150

°C

Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. Repetitive Rating : Pulse width limited by maximum junction temperature



THERMAL DATA

PARAMETER

SYMBOL

RATINGS

UNIT

Junction to Ambient

62.5

°C/W

Junction to Case

0.83

°C/W



PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

650

V

Drain-Source Leakage Current

10

μA

100

nA

Gate-Source Leakage Current

-100

nA

0.5

V/°C

ON CHARACTERISTICS

Gate Threshold Voltage

2.0

4.0

V

Static Drain-Source On-State Resistance

0.63

Ω

DYNAMIC CHARACTERISTICS

Input Capacitance

980

pF

Output Capacitance

185

pF

Reverse Transfer Capacitance

10

pF

SWITCHING CHARACTERISTICS

Turn-On Delay Time

89

nS

Turn-On Rise Time

116

nS

Turn-Off Delay Time

388

nS

Turn-Off Fall Time

(Note 1, 2)

145

nS

Total Gate Charge

47

nC

Gate-Source Charge

12.2

nC

Gate-Drain Charge

(Note 1, 2)

11.6

nC

DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS

Drain-Source Diode Forward Voltage

1.4

V

Maximum Continuous Drain-Source Diode

Forward Current

14

A

Maximum Pulsed Drain-Source Diode

Forward Current

56

A

Notes: 1. Pulse Test : Pulse width≤300μs, Duty cycle≤2%

2. Essentially independent of operating ambient temperature