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14N65K-MT Datasheet(PDF) 2 Page - Unisonic Technologies |
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14N65K-MT Datasheet(HTML) 2 Page - Unisonic Technologies |
2 / 5 page 14N65K-MT Preliminary Power MOSFET UNISONICTECHNOLOGIESCO.,LTD 2 of 5 www.unisonic.com.tw QW-R502-B11.d ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 650 V Gate-Source Voltage VGSS ±30 V Continuous Drain Current ID 14 A Pulsed Drain Current (Note 2) IDM 48 A Avalanche Current (Note 2) IAR 14 A Single Pulsed Avalanche Energy (Note 3) EAS 325 mJ Peak Diode Recovery dv/dt (Note 4) dv/dt 4.5 V/ns Power Dissipation (TC=25°C) PD 150 W Junction Temperature TJ +150 °C Storage Temperature TSTG -55~+150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating : Pulse width limited by maximum junction temperature 3. L = 3.31mH, IAS = 14A, VDD = 50V, RG= 25Ω, Starting TJ = 25°C 4. ISD≤14A, di/dt ≤200A/μs, VDD≤ BVDSS, Starting TJ= 25°C THERMAL DATA PARAMETER SYMBOL RATINGS UNIT Junction to Ambient θJA 62.5 °C/W Junction to Case θJC 0.83 °C/W ELECTRICAL CHARACTERISTICS (TC =25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS VGS = 0V, ID = 250 μA 650 V Drain-Source Leakage Current IDSS VDS = 650V, VGS = 0V 10 μA VGS = 30V, VDS = 0V 100 nA Gate-Source Leakage Current IGSS VGS = -30V, VDS = 0V -100 nA Breakdown Voltage Temperature Coefficient △BVDSS/△TJ ID=250mA,Referenced to 25°C 0.5 V/°C ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS = VGS, ID = 250μA 2.0 4.0 V Static Drain-Source On-State Resistance RDS(ON) VGS = 10V, ID = 7A 0.63 Ω DYNAMIC CHARACTERISTICS Input Capacitance CISS 980 pF Output Capacitance COSS 185 pF Reverse Transfer Capacitance CRSS VDS=25V, VGS=0V, f=1.0MHz 10 pF SWITCHING CHARACTERISTICS Turn-On Delay Time tD(ON) 89 nS Turn-On Rise Time tR 116 nS Turn-Off Delay Time tD(OFF) 388 nS Turn-Off Fall Time tF VDS=30V, ID=0.5A, RG=25Ω (Note 1, 2) 145 nS Total Gate Charge QG 47 nC Gate-Source Charge QGS 12.2 nC Gate-Drain Charge QGD VGS=10V, VDS=50V, ID=1.3A (Note 1, 2) 11.6 nC DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS Drain-Source Diode Forward Voltage VSD VGS = 0V, IS = 14A 1.4 V Maximum Continuous Drain-Source Diode Forward Current IS 14 A Maximum Pulsed Drain-Source Diode Forward Current ISM 56 A Notes: 1. Pulse Test : Pulse width≤300μs, Duty cycle≤2% 2. Essentially independent of operating ambient temperature |
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