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15N50KL-TF2-T Datasheet(PDF) 2 Page - Unisonic Technologies |
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15N50KL-TF2-T Datasheet(HTML) 2 Page - Unisonic Technologies |
2 / 5 page 15N50K-MT Power MOSFET UNISONICTECHNOLOGIESCO.,LTD 2 of 5 www.unisonic.com.tw QW-R502-B13.D ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified.) (Note 5) PARAMETER SYMBOL RATINGS UNIT Drain to Source Voltage VDSS 500 V Gate-Source Voltage VGSS ±30 V Continuous TC=25°C ID 15 A Drain Current Pulsed (Note 2) IDM 60 A Avalanche Current (Note 2) IAR 15 A Avalanche Energy Single Pulsed (Note 3) EAS 800 mJ Peak Diode Recovery dv/dt (Note 4) dv/dt 15 V/ns Power Dissipation (TC=25°C) 52 W Derate above 25°C PD 0.416 W/°C Junction Temperature TJ +150 °C Storage Temperature TSTG -55~+150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating; Pulse width limited by maximum junction temperature 3. L=7.11mH, IAS=15A. VDD=50V, RG=25Ω, Starting TJ=25°C 4. ISD≤15A, di/dt≤200A/µs, VDD≤BVDSS, Starting TJ=25°C 5. Drain current limited by maximum junction temperature THERMAL DATA PARAMETER SYMBOL RATINGS UNIT Junction to Ambient θJA 62.5 °C/W Junction to Case θJC 2.4 °C/W ELECTRICAL CHARACTERISTICS PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS ID=250µA, VGS=0V, TJ=25°C 500 V Breakdown Voltage Temperature Coefficient ∆BVDSS/∆TJ Reference to 25°C, ID=250µA 0.5 V/°C VDS=500V, VGS=0V 1 µA Drain-Source Leakage Current IDSS VDS=400V, VGS=0V, TJ=125°C 10 µA Forward VGS=+30V, VDS=0V +100 nA Gate- Source Leakage Current Reverse IGSS VGS=-30V , VDS=0V -100 nA ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VGS=VDS, ID=250µA 2.0 4.0 V Static Drain-Source On-State Resistance RDS(ON) VGS=10V, ID=7.5A 0.27 0.36 Ω DYNAMIC PARAMETERS Input Capacitance CISS 970 pF Output Capacitance COSS 210 pF Reverse Transfer Capacitance CRSS VDS=25V, VGS=0V, f=1.0MHz 11 pF SWITCHING PARAMETERS Turn-ON Delay Time tD(ON) 91 ns Rise Time tR 147 ns Turn-OFF Delay Time tD(OFF) 258 ns Fall-Time tF VDS=30V, ID=0.5A, RG=25Ω (Note 1, 2) 156 ns Total Gate Charge QG 47.3 nC Gate to Source Charge QGS 13 nC Gate to Drain ("Miller") Charge QGD VGS=10V, VDS=50V, ID=1.3A (Note 1, 2) 13.2 nC SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Maximum Body-Diode Continuous Current IS 15 A Maximum Body-Diode Pulsed Current ISM 60 A Drain-Source Diode Forward Voltage VSD ISD=15A, VGS=0V 1.4 V Notes: 1. Pulse Test: Pulse width≤300µs; Duty Cycle≤2% 2. Essentially Independent of Operating Temperature Typical Characteristics |
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