2

OptiMOS™3PowerMOSTransistorChip

IPC028N03L3

Rev.2.5,2014-07-23

Final Data Sheet

PowerMOSTransistorChip

Drain

Gate

Source

1Description

•N-channelenhancementmode

•FordynamiccharacterizationrefertothedatasheetofIPD060N03LG

•AQL0.65forvisualinspectionaccordingtofailurecatalogue

•ElectrostaticDischargeSensitiveDeviceaccordingtoMIL-STD883C

•Diebond:solderedorglued

•Backsidemetallization:NiVsystem

•Frontsidemetallization:AlCusystem

•Passivation:nitride+imide

Table1KeyPerformanceParameters

Parameter

Value

Unit

30

V

6.0

1)

m

Ω

Die size

2.26 x 1.24

mm

2

Thickness

175

µm

Type/OrderingCode

Package

Marking

RelatedLinks

IPC028N03L3

Chip

not defined

-

2ElectricalCharacteristicsonWaferLevel

Table2

Values

Min.

Typ.

Max.

Parameter

Symbol

Unit Note/TestCondition

Drain-source breakdown voltage

30

-

-

V

Gate threshold voltage

1

-

2.2

V

Zero gate voltage drain current

-

0.1

2

µA

Gate-source leakage current

-

10

100

nA

Drain-source on- resistance

-

0.5

2)

50

3)

m

Ω

Reverse diode forward on-voltage

-

0.86

1.1

V