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UCR2PML-8-TF3-T Datasheet(PDF) 2 Page - Unisonic Technologies |
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UCR2PML-8-TF3-T Datasheet(HTML) 2 Page - Unisonic Technologies |
2 / 3 page UCR2PM Preliminary TRIACS UNISONICTECHNOLOGIESCO.,LTD 2 of 3 www.unisonic.com.tw QW-R220-020.a ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL RATINGS UNIT Repetitive Peak Off-State Voltage (Note 1) TJ=125°C VDRM 800 V TJ=150°C 700 V Non-Repetitive Peak Off-State Voltage (Note 1) VDSM 840 V On-State RMS Current (Commercial Frequency, Sine Full Wave 360° Conduction) IT(RMS) 2 A Surge On-State Current (60Hz Sinewave 1 Full Cycle, Peak Value, Non-Repetitive) ITSM 10 A I 2t for Fusing (Value Corresponding to 1 Cycle of Half Wave 60Hz, Surge On-State Current) I 2t 0.41 A 2s Peak Gate Current IGM 1 A Peak Gate Power Dissipation PGM 1 W Average Gate Power Dissipation PG(AV) 0.1 W Peak Gate Voltage VGM 6 V Storage Junction Temperature TSTG -40~+150 °C Operating Junction Temperature TJ -40~+150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. THERMAL RESISTANCES PARAMETER SYMBOL MAX UNIT Junction to Ambient θJA 45 °C/W ELECTRICAL CHARACTERISTICS (TJ=25 °C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT Gate Trigger Current (Note 2) IGT TJ=25°C, VD=6V, RL=6Ω, RG=330Ω I 10 mA II 10 mA III 10 mA Gate Trigger Voltage (Note 2) VGT TJ=25°C, VD=6V, RL=6Ω, RG=330Ω I 2.0 V II 2.0 V III 2.0 V Gate Non-Trigger Voltage VGD TJ=150°C, VD=1/2 VDRM 0.1 V Holding Current (Note 2) IH IT=300mA 2.98 mA Latching Current IL IG=1.2IGT I-II 5 mA II 10 mA Critical Rate of Rise of Off-State commutation Voltage (Note 3) (dv/dt)c TJ=125°C 0.5 V/µs STATIC CHARACTERISTICS PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT On-State Voltage VTM TJ=25°C, ITM=3A, Instantaneous Measurement 2.1 V Repetitive Peak Off-State Current IDRM TJ=150°C, VDRM Applied 1.0 mA Notes: 1. Gate open. 2. Measurement using the gate trigger characteristics measurement circuit. 3. Test conditions of the critical-rate of rise of off-state commutation voltage is shown in the table below. |
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