UF830KG-TA3-T datasheet(4/7 Pages) UTC

Part #	UF830KG-TA3-T

Description	N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

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Manufacturer	UTC [Unisonic Technologies]

Direct Link	http://www.utc-ic.com

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4 / 7 page

UF830K-MT

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

4 of 7

www.unisonic.com.tw

QW-R209-030.D



ELECTRICAL SPECIFICATIONS (TA =25°C, unless otherwise specified.)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

BVDSS

ID=250μA, VGS=0V

500

V

On-State Drain Current (Note 1)

ID(ON)

VDS>ID(ON)×RDS(ON)MAX, VGS=10V

4.5

A

Drain-Source Leakage Current

IDSS

VDS= Rated BVDSS, VGS=0V

25

μA

VDS=0.8×Rated BVDSS

VGS=0V, TJ= 125°C

250

μA

Gate-Source Leakage Current

IGSS

VGS=±30V

±100

nA

ON CHARACTERISTICS

Gate Threshold Voltage

VGS(TH)

VGS=VDS, ID=250μA

2.0

4.0

V

Static Drain-Source On-State Resistance

RDS(ON)

ID=2.5A, VGS=10V (Note 2)

1.50

Ω

DYNAMIC PARAMETERS

Input Capacitance

CISS

VDS=25V, VGS=0V, f=1.0MHz

420

pF

Output Capacitance

COSS

66

pF

Reverse Transfer Capacitance

CRSS

6.5

pF

SWITCHING PARAMETERS

Turn-On Delay Time

tD(ON)

VDD=30V, ID≈0.5A RGS=25Ω

(Note 2)

48

ns

Turn-On Rise Time

tR

48

ns

Turn-Off Delay Time

tD(OFF)

42

ns

Turn-Off Fall Time

tF

44

ns

Total Gate Charge

QG

VGS=10V, ID=1.3A, VDD=50V

IG=100mA (Note 3)

13.8

nC

Gate-Source Charge

QGS

5.4

nC

Gate-Drain Charge

QGD

6.0

nC

Notes: 1. Pulse Test: Pulse width≤300μs, Duty Cycle≤2%.

2. MOSFET Switching Times are Essentially Independent of Operating Temperature.

3. Gate Charge is Essentially Independent of Operating Temperature.



SOURCE TO DRAIN DIODE SPECIFICATIONS

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX UNIT

Source to Drain Diode Voltage

VSD

TJ=25°C,ISD=4.5A, VGS=0V(Note 1)

1.6

V

Continuous Source to Drain Current

ISD

(Note 2)

5.5

A

Pulse Source to Drain Current

ISDM

18

A

Notes: 1. Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ 2%.

2. Modified MOSFET symbol showing the integral reverse P-N junction diode as below.

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