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UTT30P06G-TM3-T Datasheet(PDF) 3 Page - Unisonic Technologies |
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UTT30P06G-TM3-T Datasheet(HTML) 3 Page - Unisonic Technologies |
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3 / 4 page  UTT30P06 Power MOSFET UNISONICTECHNOLOGIESCO.,LTD 3 of 4 www.unisonic.com.tw QW-R502-622.D ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS ID=-0.25mA, VGS=0V -60 V Drain-Source Leakage Current IDSS VDS=-60V, VGS=0V -10 µA Gate- Source Leakage Current Forward IGSS VGS=+15V, VDS=0V +100 nA Reverse VGS=-15V, VDS=0V -100 nA ON CHARACTERISTICS (Note 1) Gate Threshold Voltage VGS(TH) VDS=VGS, ID=-250µA -1.2 -2.4 V Static Drain-Source On-State Resistance RDS(ON) VGS=-10V, ID=-15A 0.027 0.08 Ω Drain-Source On-Voltage VDS(ON) VGS=-10V, ID=-30A -2.0 -2.9 V VGS=-10V, ID=-15A, TJ=150°C -2.8 V DYNAMIC PARAMETERS Input Capacitance CISS VGS=0V, VDS=-25V, f=1.0MHz 1320 2190 pF Output Capacitance COSS 260 730 pF Reverse Transfer Capacitance CRSS 190 310 pF SWITCHING PARAMETERS (Note 2) Turn-ON Delay Time tD(ON) VGS=-10V, VDD=-30V, ID=-1A, RG=9.1Ω 60 80 ns Rise Time tR 70 90 ns Turn-OFF Delay Time tD(OFF) 535 600 ns Fall-Time tF 170 190 ns Gate Charge QG VGS=-10V, VDS=-48V, ID=-30A 260 300 nC QGS 35 nC QGD 5 nC SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Drain-Source Diode Forward Voltage VSD IS=-30A, VGS=0V -2.3 -3.0 V Body Diode Reverse Recovery Time tRR IS=-30A, VGS=0V, dIS/dt=-100A/µs 175 ns Body Diode Reverse Recovery Charge QRR 0.965 µC Notes: 1. Pulse Test: Pulse Width≤300μs, Duty Cycle≤2%. 2. Switching characteristics are independent of operating junction temperature. |
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