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UTT40P04G-TA3-T Datasheet(PDF) 2 Page - Unisonic Technologies |
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UTT40P04G-TA3-T Datasheet(HTML) 2 Page - Unisonic Technologies |
2 / 4 page UTT40P04 Power MOSFET UNISONICTECHNOLOGIESCO.,LTD 2 of 4 www.unisonic.com.tw QW-R502-616.E ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS -40 V Gate-Source Voltage VGSS ±20 V Package limited -50 A Continuous Silicon limited ID -58 A Drain Current Pulsed IDM -100 A Single Pulsed Avalanche Energy (Note 2) EAS 337 mJ TO-220 125 TC=25°C TO-251/TO-252 TO-252D 55 TO-220 2 Power Dissipation TA=25°C TO-251/TO-252 TO-252D PD 1.1 W Junction Temperature TJ -55~+150 °C Storage Temperature TSTG -55~+150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Starting TJ = 25°C, L = 3mH, IAS = 15A, VDD = 40V, VGS = 10V. THERMAL DATA PARAMETER SYMBOL RATINGS UNIT TO-220 62.5 Junction to Ambient TO-251/TO-252 TO-252D θJA 110 °C/W TO-220 1 Junction to Case TO-251/TO-252 TO-252D θJC 2.27 °C/W |
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