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UTT36N05G-TA3-T Datasheet(PDF) 2 Page - Unisonic Technologies |
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UTT36N05G-TA3-T Datasheet(HTML) 2 Page - Unisonic Technologies |
2 / 6 page UTT36N05 Preliminary Power MOSFET UNISONICTECHNOLOGIESCO.,LTD 2 of 6 www.unisonic.com.tw QW-R502-654.b ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage (VGS=0) VDSS 50 V Drain-Gate Voltage (RGS=20kΩ) VDGR 50 V Gate-Source Voltage VGSS ±15 V Drain Current Continuous TC=25°C ID 36 A TC=100°C 25 A Pulsed (Note 2) IDM 144 A Avalanche Energy Single Pulsed EAS 240 mJ Repetitive EAR 60 mJ Power Dissipation (TC=25°C) SOT-223 PD 11 W TO-220 100 W Junction Temperature TJ 150 °C Storage Temperature TSTG -65~175 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Pulse width limited by safe operating area. THERMAL DATA PARAMETER SYMBOL RATINGS UNIT Junction to Ambient SOT-223 θJA 150 °C/W TO-220 62.5 Junction to Case SOT-223 θJC 11 °C/W TO-220 1.25 |
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