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23ACC12T4V10 Datasheet(PDF) 2 Page - List of Unclassifed Manufacturers

Part # 23ACC12T4V10
Description  Robust and soft freewheeling diodes in
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23ACC12T4V10 Datasheet(HTML) 2 Page - List of Unclassifed Manufacturers

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SKiiP 23ACC12T4V10
2
Rev. 3 – 02.04.2015
© by SEMIKRON
MiniSKiiP® 2
ACC
Twin 6-pack
SKiiP 23ACC12T4V10
Target Data
Features
•Trench 4 IGBTs
• Robust and soft freewheeling diodes in
CAL technology
• Highly reliable spring contacts for
electrical connections
• UL recognised: File no. E63532
Typical Applications*
•4Q inverters
Remarks
• Max. case temperature limited to
TC=125°C
• Short circuit behaviour of one leg must
be verified in the final application
Characteristics
Symbol Conditions
min.
typ.
max.
Unit
IGBT 1 - 6
VCE(sat)
IC =15A
VGE =15 V
chiplevel
Tj =25 °C
1.85
2.10
V
Tj =150 °C
2.25
2.45
V
VCE0
chiplevel
Tj =25 °C
0.8
0.9
V
Tj =150 °C
0.7
0.8
V
rCE
VGE =15 V
chiplevel
Tj =25 °C
70
80
mΩ
Tj =150 °C
103
110
mΩ
VGE(th)
VGE =VCE V, IC =1 mA
55.8
6.5
V
ICES
VGE =0 V
VCE = 1200 V
Tj =25 °C
0.1
0.3
mA
mA
Cies
VCE =25V
VGE =0 V
f=1MHz
0.90
nF
Coes
f=1MHz
0.08
nF
Cres
f=1MHz
0.06
nF
QG
VGE = - 8 V...+ 15 V
85
nC
RGint
Tj =25°C
0
Ω
td(on)
VCC = 600 V
IC =15A
RG on =39 Ω
RG off =39 Ω
di/dton =400 A/µs
di/dtoff =200 A/µs
VGE = +15/-15 V
Tj =150 °C
31
ns
tr
Tj =150 °C
30
ns
Eon
Tj =150 °C
1.65
mJ
td(off)
Tj =150 °C
315
ns
tf
Tj =150 °C
66
ns
Eoff
Tj =150 °C
1.5
mJ
Rth(j-s)
per IGBT, λpaste=0.8 W/K*m
1.3
K/W
IGBT 7 - 12
VCE(sat)
IC =25A
VGE =15 V
chiplevel
Tj =25 °C
1.85
2.10
V
Tj =150 °C
2.25
2.45
V
VCE0
chiplevel
Tj =25 °C
0.8
0.9
V
Tj =150 °C
0.7
0.8
V
rCE
VGE =15 V
chiplevel
Tj =25 °C
42
48
mΩ
Tj =150 °C
62
66
mΩ
VGE(th)
VGE =VCE V, IC =1 mA
55.8
6.5
V
ICES
VGE =0 V
VCE = 1200 V
Tj =25 °C
0.1
0.3
mA
mA
Cies
VCE =25V
VGE =0 V
f=1MHz
1.43
nF
Coes
f=1MHz
0.12
nF
Cres
f=1MHz
0.09
nF
QG
VGE = - 8 V...+ 15 V
142
nC
RGint
Tj =25°C
0
Ω
td(on)
VCC = 600 V
IC =25A
RG on =39 Ω
RG off =39 Ω
di/dton =465 A/µs
di/dtoff =350 A/µs
VGE = +15/-15 V
Tj =150 °C
44
ns
tr
Tj =150 °C
46
ns
Eon
Tj =150 °C
3.7
mJ
td(off)
Tj =150 °C
330
ns
tf
Tj =150 °C
62
ns
Eoff
Tj =150 °C
2.4
mJ
Rth(j-s)
per IGBT, λpaste=0.8 W/K*m
1K/W


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