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Document Number: 66701

S10-1287-Rev. A, 31-May-10

Vishay Siliconix

Si1422DH

New Product

Notes:

a. Pulse test; pulse width

≤ 300 µs, duty cycle ≤ 2 %.

b. Guaranteed by design, not subject to production testing.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

Parameter

Symbol

Test Conditions

Min.

Typ.

Max.

Unit

Static

Drain-Source Breakdown Voltage

12

V

ΔV

11

mV/°C

ΔV

- 2.7

Gate-Source Threshold Voltage

0.4

1.0

V

Gate-Source Leakage

± 100

nA

Zero Gate Voltage Drain Current

1

µA

10

15

A

0.021

0.026

Ω

0.024

0.030

0.029

0.036

30

S

Input Capacitance

725

pF

Output Capacitance

195

Reverse Transfer Capacitance

90

Total Gate Charge

13.1

20

nC

7.5

12

Gate-Source Charge

1.1

Gate-Drain Charge

0.8

Gate Resistance

f = 1 MHz

0.5

2.5

5

Ω

Turn-On Delay Time

10

15

ns

Rise Time

10

15

Turn-Off Delay Time

20

30

Fall Time

10

15

Turn-On Delay Time

510

Rise Time

10

15

Turn-Off Delay Time

20

30

Fall Time

10

15

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current

4

A

Pulse Diode Forward Current

20

Body Diode Voltage

0.8

1.2

V

Body Diode Reverse Recovery Time

15

30

ns

Body Diode Reverse Recovery Charge

48

nC

Reverse Recovery Fall Time

8

ns

Reverse Recovery Rise Time

7