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SI2342DS Datasheet(PDF) 3 Page - Vishay Telefunken |
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SI2342DS Datasheet(HTML) 3 Page - Vishay Telefunken |
3 / 8 page Document Number: 63302 S11-1388-Rev. A, 11-Jul-11 www.vishay.com 3 Vishay Siliconix Si2342DS New Product This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Output Characteristics On-Resistance vs. Drain Current and Gate Voltage Gate Charge 0 6 12 18 24 30 00.5 11.5 2 V DS - Drain-to-Source Voltage (V) V GS = 1.5 V V GS = 5 V thru 2 V V GS = 1 V 0.010 0.016 0.022 0.028 0.034 0.040 0 6 12 18 24 30 I D - Drain Current (A) V GS = 2.5 V V GS = 1.5 V V GS = 4.5 V V GS = 1.8 V V GS = 1.2 V 0 0.9 1.8 2.7 3.6 4.5 0369 12 Q g - Total Gate Charge (nC) V DS = 6.4 V V DS = 4 V V DS = 2 V I D = 7.2 A Transfer Characteristics Capacitance On-Resistance vs. Junction Temperature 0 1 2 3 4 5 0 0.3 0.6 0.9 1.2 V GS - Gate-to-Source Voltage (V) T C = 25 °C T C = 125 °C T C = - 55 °C 0 300 600 900 1200 1500 02468 V DS - Drain-to-Source Voltage (V) C iss C oss C rss 0.7 0.9 1.1 1.3 - 50 - 25 0 255075 100 125 150 T J - Junction Temperature (°C) I D = 7.2 A V GS = 4.5 V V GS = 2.5 V |
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