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BFN19 Datasheet(PDF) 1 Page - Infineon Technologies AG |
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BFN19 Datasheet(HTML) 1 Page - Infineon Technologies AG |
1 / 6 page 2011-09-30 1 BFN19 1 2 2 3 PNP Silicon High-Voltage Transistors • Suitable for video output stages in TV sets and switching power supplies • High breakdown voltage • Low collector-emitter saturation voltage • Complementary types: BFN18 (NPN) • Pb-free (RoHS compliant) package • Qualified according AEC Q101 Type Marking Pin Configuration Package BFN19 DH 1=B 2=C 3=E SOT89 Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage VCEO 300 V Collector-base voltage VCBO 300 Emitter-base voltage VEBO 5 Collector current IC 200 mA Peak collector current, tp ≤ 10 ms ICM 500 Base current IB 100 Peak base current IBM 200 Total power dissipation- TS ≤ 130 °C Ptot 1 W Junction temperature Tj 150 °C Storage temperature Tstg -65 ... 150 Thermal Resistance Parameter Symbol Value Unit Junction - soldering point1) RthJS ≤ 20 K/W 1For calculation of RthJA please refer to Application Note AN077 (Thermal Resistance Calculation) |
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