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BFN19 Datasheet(PDF) 1 Page - Infineon Technologies AG

Part # BFN19
Description  Low collector-emitter saturation voltage
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Manufacturer  INFINEON [Infineon Technologies AG]
Direct Link  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

BFN19 Datasheet(HTML) 1 Page - Infineon Technologies AG

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2011-09-30
1
BFN19
1
2
2
3
PNP Silicon High-Voltage Transistors
• Suitable for video output stages in TV sets
and switching power supplies
• High breakdown voltage
• Low collector-emitter saturation voltage
• Complementary types: BFN18 (NPN)
• Pb-free (RoHS compliant) package
• Qualified according AEC Q101
Type
Marking
Pin Configuration
Package
BFN19
DH
1=B
2=C
3=E
SOT89
Maximum Ratings
Parameter
Symbol
Value
Unit
Collector-emitter voltage
VCEO
300
V
Collector-base voltage
VCBO
300
Emitter-base voltage
VEBO
5
Collector current
IC
200
mA
Peak collector current, tp ≤ 10 ms
ICM
500
Base current
IB
100
Peak base current
IBM
200
Total power dissipation-
TS ≤ 130 °C
Ptot
1
W
Junction temperature
Tj
150
°C
Storage temperature
Tstg
-65 ... 150
Thermal Resistance
Parameter
Symbol
Value
Unit
Junction - soldering point1)
RthJS
≤ 20
K/W
1For calculation of RthJA please refer to Application Note AN077 (Thermal Resistance Calculation)


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